浏览全部资源
扫码关注微信
1. 中国科学院长春光学精密机械与物理研究所激发态物理重点实验室, 吉林, 长春, 130033
2. 吉林大学物理科学学院, 吉林, 长春, 130026
3. 长春大学教务处, 吉林, 长春, 130022
收稿日期:2003-06-02,
修回日期:2003-09-04,
纸质出版日期:2004-07-30
移动端阅览
王志军, 宋立军, 王之建, 李守春, 张金宝, 王泽恒, 吕有明, 申德振, 张吉英, 范希武, 元金山. 变分法计算ZnO量子点中激子的基态能[J]. 发光学报, 2004,25(4): 383-388
WANG Zhi-jun, SONG Li-jun, WANG Zhi-jian, LI Shou-chun, ZHANG Jin-bao, WANG Ze-heng, LU You-ming, SHEN De-zhen, ZHANG Ji-ying, FAN X W, YUAN Jin-shan. Calculation of the Ground State Energy of Excitons in ZnO Quantum Dots by Variational Method[J]. Chinese Journal of Luminescence, 2004,25(4): 383-388
王志军, 宋立军, 王之建, 李守春, 张金宝, 王泽恒, 吕有明, 申德振, 张吉英, 范希武, 元金山. 变分法计算ZnO量子点中激子的基态能[J]. 发光学报, 2004,25(4): 383-388 DOI:
WANG Zhi-jun, SONG Li-jun, WANG Zhi-jian, LI Shou-chun, ZHANG Jin-bao, WANG Ze-heng, LU You-ming, SHEN De-zhen, ZHANG Ji-ying, FAN X W, YUAN Jin-shan. Calculation of the Ground State Energy of Excitons in ZnO Quantum Dots by Variational Method[J]. Chinese Journal of Luminescence, 2004,25(4): 383-388 DOI:
ZnO是一种新型宽禁带直接带隙Ⅱ-Ⅵ族半导体材料
室温激子束缚能高达60meV
远大于室温热离化能(26meV)
因此ZnO是适于室温或更高温度下使用的高效紫外发射材料。ZnO半导体量子点材料与体材料相比具有崭新的光电特性
特别在紫外激光器件方面
与ZnO的激子特性密切相关
因此理论上对ZnO量子点中激子的基态能(束缚能)的研究就显得十分必要。采用有效质量近似(EMA)方法
提出新的比较简单的尝试波函数
并用变分法对ZnO量子点的激子基态能进行了计算。将计算结果与我们用固态热分解法制备的ZnO量子点的实验结果进行了比较
发现与实验结果非常吻合;与Y.Kayanuma的理论计算结果进行了比较
二者的计算结果也基本一致。说明选取的尝试波函数简单有效
可用于计算其他半导体量子点材料
具有一定的实用价值。
Nanoscale semiconductor structures such as quantum wells
wires
and dots have stimulated great interest due to the predicted improvement in device performance.Many unique and fascinating properties have been demonstrated in semiconductor nanostructures.ZnO is a wide direct band gapⅡ-Ⅵ semiconductor material with a large exciton binding energy of 60meV at room temperature
more larger than the ionization energy at room temperature(26meV)
so ZnO is a suitable high efficient ultraviolet material
blue light emitters and detectors at room temperature even at higher temperature.ZnO quantum dots has unique photoelectric properties compared with the bulk material
especial used in UV laser devices filed related with its exciton characteristic.In theory
the larger of exciton bind energy at room temperature
the more easily to realize high efficient stimulated emission at room temperature.So three-dimensional confined nannocrystalline ZnO(or ZnO quan-tum dots) become the hope of high efficient quantum dots laser even nanolaser
and attract great deal of interests of scientists.Therefore
it is very important to study the ground state energy(binding energy) of exciton of ZnO quantum dots in theory.Recent years
many methods were used to prepare quantum dots material with different shape and size
some modern measure technology and instruments were utilized to study the properties of the quantum dots.Many theoretical models were used to research the quantum dots
for example
effective mass qpproximately(EMA)
tight binding approximately(TBA)
pseudo method(PM)
et al.The EMA method is a direct and most useful method for parabola energy band structure.In this paper
we calculate the ground state energy of exciton in ZnO quantum dots by variation method.The calculation is based on a new trial wave function under the effective mass approximation(EMA).The calculation is very simple for the simple trial wave function.Comparision of the calculation results with the experiment values indicates the new trial wave function is right.We also compared the calculation results with the Y.Kayanuma's calculation results.The compared results illuminate the two calculation results is very approach
that make out the new trial wave function is simple and effective
and can applied to other semiconductor quantum dots.
0
浏览量
75
下载量
0
CSCD
关联资源
相关文章
相关作者
相关机构