The ZnO thin film has been deposited on Al/Si(100) substrate by direct current (DC) reactive magnetron sputtering method. The ZnO Schottky Barrier Diode (SBD) has been fabricated using Al and Pt as ohmic and Schottky contacts

respectively. X-ray diffraction (XRD) measurement indicated that the ZnO thin film was well

c

-axis oriented. The atomic force microscope (AFM) showed that ZnO thin film had a smooth surface and the grain size was about 100nm. The spreading resistance profile (SRP) indicated that the thickness and carrier concentration of ZnO film was 0.4μm and 18×10

15

cm

-3

respectively. The Hall effect measurements showed that ZnO thin film was of n type conductivity. The current voltage measurements indicated an evident rectifying characteristic of ZnO SBD. The barrier height between Pt and n-type ZnO was 0.54eV. This is the first attempt toward ZnO thin film SBD

which has not been reported before and the performance of the ZnO SBD could be improved by optimizing the device structure and technology.