As a substrate

because of their relatively regular structure with narrow size distributions of pore diameters and interpore spacings

porous alumina membranes are used to make compactly integrate with samples

and don’t affect the photoluminescence (PL)

so we select it as a substrate to grow nano-crystalline Si (nc-Si) films and study the temperature dependence of independent PL. In this paper

nc-Si films have been fabricated using high vacuum electron beam evaporation on porous alumina. Except PL of samples at different temperature

several measuremental techniques

including scanning electronic microscopy (SEM)

X-ray diffraction (XRD) and Fourier transform infrared absorption (FTIR) were used to analyze the morphology characteristic

crystalline phase and composition of the nc-Si films. After the processes of high temperature annealing at 650℃

a sharp diffractional peak of sample at 28.5° may be detected by XRD

it is demonstrated that the samples have a few crystalline silicon. FTIR measurements show that there are oxygen and hydrogen in nc-Si films. The PL spectra of nc-Si films were observed in the temperature range of 10～300 K. The experimental results of PL show that the change of PL peak and intensity of nc-Si films is dependent on measurement temperature. With temperature increasing from 10 K

the PL peaks have a red shift

while they have a peculiar blue shift in range of 50～80 K. The PL intensity decrease with temperature increase

while they have a little abnormal increment in the range of 60～80 K. In order to get the right reason

we must think over the systhetic effect of quantum confinement and surface state to analyze the PL mechanism of nc-Si films. According to previous theories

it has been suggested that the photoluminescence originated from the quantum confinement effects and the luminescent centers in surface layers covering the nanoscale silicon particles.