Organic thin film transistors and electronics are of interest for low cost high information content displays

especially on flexible substrates

and for other large area electronic applications. Ambipolar field-effect transistors

which operate as either n or p-channel devices

depending on the polarity of the gate bias

can operate in a mixed or bipolar mode. They have been realized with amorphous silicon

organic semiconductor heterostructures

and organic single crystal. We report here on the structure and operating characteristics of an ambipolar organic light emitting field-effect transistor based on single crystal of the pentacene. The electrons and holes are injected equally from the source and drain respectively and the drain current can be controlled by the adjusting gate and drain source voltages. Excitons are generated

leading to radiative recombination. We grown the single crystal thin film based on pentacene by physical vapor deposition and fabricated organic field-effect transistor using it. The thickness of the film is about some few micrometer and the length is about some few millimeter. The proportion between the length and thickness is about 1000. Using polyimide as bond organic thin film was tiled on the glass substrate. By magnetic controlled sputtering method

choosing appropriate condition of sputtering

Al as source drain electrode

Al

2

O

3

as insulation layer and Al as gate electrode were obtained. Then

we measure

I-V

characteristics and discuss luminescence principle about organic field-effect transistors. The most important two factors of the success are the use of organic single crystal with high mobility and the employ of the field-effect structure to control injection for the ambipolar organic light emitting field-effect transistor.