ZHOU Ying-xue, WANG Dong-sheng, ZHANG Xin-yi. Luminescence and Electrical Properties of BaFBr∶Eu<sup>2+</sup>[J]. Chinese Journal of Luminescence, 2003,24(4): 399-402
ZHOU Ying-xue, WANG Dong-sheng, ZHANG Xin-yi. Luminescence and Electrical Properties of BaFBr∶Eu<sup>2+</sup>[J]. Chinese Journal of Luminescence, 2003,24(4): 399-402DOI:
is a kind of photo stimulated luminescence (PSL) material with a wide energy band bigger than 8eV. For BaFBr:Eu
2+
powder samples
without pre irradiation of X-ray
VUV or UV light
the radiative transition of Eu
2+
ion peaked at about 390nm can be observed
even if the excitation wavelength is longer than 400nm. The electron spin resonance (ESR) spectrum reveals that there are both electron and hole-type traps in powder samples
which play an important role in the PSL process of BaFBr:Eu
2+
. The slice of BaFBr:Eu
2+
powder was fabricated under pressure. Two electrodes were evaporated or glued on the surface of slices
so that we can study the electrical properties of BaFBr:Eu
2+
such as the relationship between resistance and voltage
variation of remainder voltage with time and effect of electrode material on it. When a direct current voltage is applied between two electrodes on slices
we have found that at the interface between BaFBr slice surface and electrodes
there exists charge carrier accumulating as a result of the potential barriers
and when the applied voltage was canceled
we can also detect the remainder voltage due to the residual carrier at the interface. The remainder voltage will be decreased with time. When the applied voltage between two electrodes of samples was changed
from higher value to lower one or in inverse direction
the
I-V
curves
therefore the relationship between resistance and voltage
are different. For different materials of electrode
such as Ag or Cu
if applied voltages are low
the remainder voltage is almost a constant which is only related to the material of electrodes
but
when the applied voltage is high enough
the remainder voltage will decrease with the increase of applied voltage. We believe that this phenomenon might result from the penetration of charge carriers through potential barriers under high applied voltages. The investigation results of electrical properties of BaFBr:Eu
2+
show that there exist both electron and hole traps in BaFBr:Eu
2+
. The trapped electrons and holes are first escaped to conduction band or valence band
and then transported
respectively
to excited or fundamental levels of Eu
2+
ion. As a result
the Eu
2+
will be excited and its radiative recombination can be observed.