Semiconducting silicon is the dominant material in microeletronics

which is a key for high technology

but it cannot emit light efficiently. It is necessary to develop Si based light emitting material for optoelectronic integrational device.The study of Si based light emitting materials is a new leading field in semiconductor optoelectronics and photonics. Bulk Si

however

is of little use for photonic devices owing to its indirect band gap and its poor radiative electron hole recombination.The light emitting of Si based quantum dot is attractive research direction. The nc-Si(Si quantum-dot)/SiO

2

is a promising light emitting material. The quantum confinement effect in nanocrystallites has proved to be highly effective for light emission. In this paper

the tetraethoxysilane (TEOS) precursor is hydrolyzed with ethanol as co solvent under various concentrations of hydrochloric acid catalyzer to prepare the SiO

2

solution through sol gel process.A nc-Si/SiO

2

film were fabricated by spin coating of such pre polymer solutions onto glass slides followed by aging and during of resultant gels. We give the SEM(scan-electronics microscope) of nc-Si/SiO

2

and energy spectra of nc-Si/SiO

2

.The effects of colloid viscosity

acid catalyzer concentrations

speed and time of spin coating on quality of film are revealed.In nc-Si/SiO

2

film

the particles (nc-Si) in nanocrystalline material have the size of about 1nm to 100nm

and there are several new effects upon conventional material among them e.g. micro-sized effect

quantum-size effect and macro quantum tunneling effect. It is just because of the existence of these effects nanocrystalline material shows out different characteristics on mechanics

thermodynamics

electricity and chemistry. So from the moment of its appearance

nanocrystalline material had been attracting more and more attentions of scientists on it.