基片温度对坡莫合金薄膜结构和磁电阻的影响

王凤平; 刘还平; 吴平; 潘礼庆; 邱宏; 田跃; 罗胜

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基片温度对坡莫合金薄膜结构和磁电阻的影响

研究论文 | 更新时间：2020-08-11

- 基片温度对坡莫合金薄膜结构和磁电阻的影响
- Effect of Substrate Temperature on the Structure and Magnetoresistance of Permalloy Films
- 发光学报 2003年24卷第4期页码：435-437
- 作者机构：
  
  北京科技大学, 物理系北京,100083
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助项目(19974005)()
- DOI：
  中图分类号： TM276
- 收稿日期：2002-08-12，
  
  修回日期：2003-03-12，
  
  纸质出版日期：2003-07-20
- 稿件说明：
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王凤平, 刘还平, 吴平, 潘礼庆, 邱宏, 田跃, 罗胜. 基片温度对坡莫合金薄膜结构和磁电阻的影响[J]. 发光学报, 2003,24(4): 435-437

WANG Feng-ping, LIU Huan-ping, WU Ping, PAN Li-qing, QIU Hong, TIAN Yue, LUO Sheng. Effect of Substrate Temperature on the Structure and Magnetoresistance of Permalloy Films[J]. Chinese Journal of Luminescence, 2003,24(4): 435-437
王凤平, 刘还平, 吴平, 潘礼庆, 邱宏, 田跃, 罗胜. 基片温度对坡莫合金薄膜结构和磁电阻的影响[J]. 发光学报, 2003,24(4): 435-437 DOI：

WANG Feng-ping, LIU Huan-ping, WU Ping, PAN Li-qing, QIU Hong, TIAN Yue, LUO Sheng. Effect of Substrate Temperature on the Structure and Magnetoresistance of Permalloy Films[J]. Chinese Journal of Luminescence, 2003,24(4): 435-437 DOI：

摘要

用磁控溅射方法制备了系列坡莫合金Ni

薄膜。利用X射线衍射、扫描电子显微镜和原子力显微镜分析了薄膜的结构、晶粒取向、薄膜厚度、截面结构和表面形态。用4点探测技术测量了薄膜的电阻和磁电阻。结果表明:随衬底温度的升高

晶粒明显长大

膜内的缺陷和应力显著减小

而且增强了薄膜晶粒的[111]择优取向。结果表明

薄膜电阻率显著减小

而磁电阻显著增大。

Abstract

Permalloy Ni

films (about 80nm　thick) have been prepared by magnetron sputtering. The substrates were Si (111) single crystal wafers on which 500nm thick SiO

were formed by thermal oxidization. The films were deposited at 300

643 and 823K in 0.45Pa argon pressure. The base pressure in our vacuum chamber was about 4×10

-5

Pa. The deposition rate was about 3nm/min for all the films. The structure of the films

grain orientation

cross section morphology

grain size and surface roughness were characterized using X-ray diffraction

scanning electron microscopy and atomic force microscopy. The resistance and magnetoresistance of the films were measured using four point probe technique. The results show that with rising substrate temperature the crystallization become notable and the texture of (111) orientation developed gradually in the growing films. As a result

the resistance decreased evidently and magnetoresistance ratio increased markedly.

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