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中国科学院长春光学精密机械与物理研究所, 激发态物理重点实验室,吉林 长春,130033
收稿:2002-08-12,
修回:2003-1-15,
纸质出版:2003-05-20
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刘英麟, 刘益春, 王维彪, 马剑钢, 张吉英, 吕有明, 范希武, 申德振. 一种新的制备ZnO纳米粒子的方法——阴极电沉积法[J]. 发光学报, 2003,24(3): 289-292
LIU Ying-lin, LIU Yi-chun, WANG Wei-biao, Ma, Jian-gang, ZHANG Ji-ying, LU You-ming, FAN X W, SHEN De-zhen. A New Method of Growing Nanocrystalline ZnO Films:Cathodic Electrodeposition[J]. Chinese Journal of Luminescence, 2003,24(3): 289-292
刘英麟, 刘益春, 王维彪, 马剑钢, 张吉英, 吕有明, 范希武, 申德振. 一种新的制备ZnO纳米粒子的方法——阴极电沉积法[J]. 发光学报, 2003,24(3): 289-292 DOI:
LIU Ying-lin, LIU Yi-chun, WANG Wei-biao, Ma, Jian-gang, ZHANG Ji-ying, LU You-ming, FAN X W, SHEN De-zhen. A New Method of Growing Nanocrystalline ZnO Films:Cathodic Electrodeposition[J]. Chinese Journal of Luminescence, 2003,24(3): 289-292 DOI:
用阴极电沉积法制备高质量ZnO纳米薄膜
电沉积采用含有不同浓度的ZnCl
2
的非水二甲基亚砜溶液做电解液
室温下恒流沉积
得到纳米ZnO薄膜。研究了ZnCl
2
浓度对薄膜结构和光学性质的影响。沉积薄膜的ZnO粒径尺寸分别为9.8
10.4
14.5nm
随着ZnCl
2
浓度的增加而增大。薄膜的可见光致发光谱以紫外的自由激子发射为主。研究表明:以浓度为0.03mol/L的ZnCl
2
电解液制备的ZnO薄膜光学性质最好。
ZnO film is of great interest for short-wavelength optoelectronic application because ZnO semiconductor with a wide band gap of 3.34eV has a large exciton binding energy of 60meV at room temperature. At present
there have been many different techniques used to prepare nanocrystalline ZnO films such as molecular beam epitaxy
vapor phase deposition
and pulsed laser deposition.In this paper nanocrystalline ZnO films have been grown by a simple method of cathodic electrodeposition. Preparation of ZnO films using this method presents several advantages such as relatively high deposition rate
low deposition temperature
and low equipment cost. Cathodic electrodeposition has been widely used to deposit ZnO micrometer size particles
while little has been reported on the deposition of ZnO nanoparticles by cathodic electrodepo sition on Si substrate. In this paper dimethylsulfoxide (DMSO) solutions containing ZnCl
2
is introduced to get OH free ZnO films. Furthermore Si wafers were used as the substrates
which is of considerable interest to the optoelectronic integration. Deposition is carried out in DMSO solutions containing ZnCl
2
with different concentration from 0.01mol/L to 0.05mol/L on Si substrates at room temperature. The grown films were characterized by means of ex situ techniques:X-ray diffraction
atom force microscopy
infrared spectroscopy and photoluminescence spectroscopy. The effects of ZnCl
2
concentration on the structural and optical properties of the films have been studied. The mean grain size of the samples
which increases with the increase of ZnCl
2
concentration are 9.8
10.4 and 14.5nm
respectively. The photoluminescence spectra of all the samples show two distinct features:strong ultraviolet emission lines from ZnO free exciton and negligibly weak green emission band around 510nm
which is from deep level defect emission associated with oxygen vacancies in the ZnO lattice.The exciton emission dominated in the photoluminescence spectra. In conclusion
nanocrystalline ZnO films have been fabricated by cathodic electrodeposition on Si substrates from DMSO ZnCl
2
electrolytes. The results indicate that this method is a promising way to prepare nanocrystalline ZnO films.
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