The fundamental physical properties of Hg

1-x

Cd

x

Te make it an excellent candidate material for infrared photoelectric detectors. Recently

much attention has been paid to Hg

1-x

Cd

x

Te films grown by different epitaxial techniques on the substrate Cd

1-y

Zn

y

Te due to the possibility of fabricating large area detectors as well as high precision focal plane array detectors. Investigations of the phonon vibration spectra for Hg

1-x

Cd

x

Te are necessary to understand the lattice dynamics and to obtain structure information about the material. In this paper

the micro Raman and micro photoluminescence spectra of four LPE Hg

1-x

Cd

x

Te epitaxial film samples were measured at room temperature within the spectral range of 100cm

-1

to 5 000cm

-1

.The micro photoluminescence results show that there is an anion vacancy resonance level far up in the conduction band

about 1.47eV above the conduction band edge of the Hg

1-x

Cd

x

Te epitaxial films. In the micro Raman spectra of samples there are four main Raman peaks 120

138

155 and 261cm

-1

are observed. Raman peaks 120cm

-1

belongs to HgTe like TO

1

phonon vibrational mode

138cm

-1

belongs to HgTe like LO

1

phonon vibrational mode

155cm

-1

occurs due to the CdTe like LO

1

and CdTe like TO

1

phonon mixed vibration

and 261cm

-1

comes from the two phonon mode TO

1

(HgTe like)+LO

1

(HgTe like). Our results definitely show that the micro photoluminescent structure is mainly due to the improvement in quality of the Hg

1-x

Cd

x

Te epilayer.