YAN Li, CHEN Xiao-yang, HE Shi-tang, LI Hong-lang, HAN Pei-de, CHEN Zhen, LU Da-cheng, LIU Xiang-lin, WANG Xiao-hui, LI Yu-feng, YUAN Hai-rong, LU Yuan, LI Da-bing, ZHU Qin-sheng, WANG Zhan-guo. Study of the Surface Acoustic Wave Properties of GaN[J]. Chinese Journal of Luminescence, 2003,24(2): 161-164
YAN Li, CHEN Xiao-yang, HE Shi-tang, LI Hong-lang, HAN Pei-de, CHEN Zhen, LU Da-cheng, LIU Xiang-lin, WANG Xiao-hui, LI Yu-feng, YUAN Hai-rong, LU Yuan, LI Da-bing, ZHU Qin-sheng, WANG Zhan-guo. Study of the Surface Acoustic Wave Properties of GaN[J]. Chinese Journal of Luminescence, 2003,24(2): 161-164DOI:
High quality and high resistivity (0001) GaN film was grown on (0001) plane sapp hire by metalorganic vapor phase epitaxy (MOVPE). To measure the surface a coustic wave (SAW) properties accurately
metallized interdigital transducers (IDT) we re deposited on the GaN surface. The pitch of the IDT was 15μm (=λ/4
λ:S AW w avelength)
and the number of IDT finger pairs was 40. The surface acoustic wave velocity on free surface and that on metal surface were measured by pulse metho d respectively
and then the electromechanical coupling coefficient was calculat ed. The surface acoustic wave velocity (