ZnSe epilayers were grown on Si(111)substrates by low-pressure metalorganic chemical vapor deposition(MOCVD)with ZnO as a buffer layer. ZnO films were prepared by radio frequency(RF)magnetron sputter deposition technique. X-ray diffraction measurements showed that ZnSe film grown on ZnO-Si(111)substrates were epitaxial films with strong(111)preferential orientation. It is found from X-ray diffraction that the longer time annealing of ZnO films

the better crystallization of ZnSe films were. Photoluminescence(PL)showed that with the higher annealing temperature of ZnO buffer layer

the better ZnSe films also. The photoluminescence(PL)showed a strong and dominant peak emission at near-band-edge emission about 450nm

which was ascribed to free exciton emission. Above results indicated that quality of ZnSe films grown on Si(111)substrates were improved by using ZnO as a buffer layer.