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1. 中国科学技术大学物理系
2. 中国科学技术大学国家同步辐射实验室,安徽 合肥,230029
收稿日期:2001-09-20,
修回日期:2002-04-01,
纸质出版日期:2002-07-20
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陈永虎, 施朝淑, 戚泽明. 不同气氛退火对PbWO<sub>4</sub>单晶发光的影响[J]. 发光学报, 2002,23(4): 385-388
CHEN Yong-hu, SHI Chao-shu, QI Ze-ming. Influence of Different Annealing Atmosphere on the Luminescence of PbWO<sub>4</sub> Single Crystal[J]. Chinese Journal of Luminescence, 2002,23(4): 385-388
通过对不同气氛条件下退火的PbWO
4
(PWO)单晶样品的激发谱与发射谱的对比研究
发现真空退火从整体上抑制PbWO
4
的发光强度
氧空位(V
o
)缺陷是420nm吸收和红光发射的原因
而空气退火可以有效抑制V
o
缺陷
全面改善PWO的发光性能.另外
首次报道了310nm附近的激子激发峰发生劈裂的现象
其中波长较长的320nm激发对应于与V
o
缺陷相关的激子激发态.
The influence of different annealing atmospheres (vacuum
air
reductive) on the luminescent properties of lead tungstate single crystals (PWO) has been investigated. UV-excited emission spectra and their excitation spectra of the same PWO sample at different annealing conditions were reported. The emission of PWO as grown was weak and dominated by the defect-related red band which is a disadvantage for the scintillation of PWO. The intrinsic blue band was just discernable from the red band. After air annealing
the luminescence intensity was increased enormously and the green band was turn into the prominence of the emission spectra. It suggested that the green emission originate from some local excess oxygen defects
such as (WO
4
2-
+O
i
) centers (here O
i
means interstitial oxygen atom). After subsequently vacuum annealing
the emission intensity was dropped again
and the increase of 420nm excitation in the excitation spectra of the red band emission was remarkable. The color center around 420nm is harmful to the radiation hardness of PWO and should be avoid. It suggested all the unfavorable factor after vacuum annealing is caused by the increase of the concentration of oxygen vacancy V
o
since the oxygen in the lattice can diffuse outward through the surface when annealing in vacuum under high temperature. So air annealing which decrease the concentration of V
o
is a good method to improve the luminescence properties in full scale.In addition
the splitting of 310nm excitation band into two sharp excitation peaks around 305nm and 320nm was observed for the first time when another PWO sample was investigated after vacuum annealing. With the increasing of V
o
concentration
305nm peak lowered while 320nm peak heightened. It suggested that 305nm excitation is corresponding to the excitation of intrinsic excitons while 320nm excitation is corresponding to the bound exciton related to V
o
-defects.
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