MEI Zeng-xia, ZHANG Xi-qing, YI Li-xin, ZHAO Su-ling, WANG Jing, LI Qing-fu, HAN Jian-min. Preparation and Photoluminescent Properties of ZnO Thin Film[J]. Chinese Journal of Luminescence, 2002,23(4): 389-392
MEI Zeng-xia, ZHANG Xi-qing, YI Li-xin, ZHAO Su-ling, WANG Jing, LI Qing-fu, HAN Jian-min. Preparation and Photoluminescent Properties of ZnO Thin Film[J]. Chinese Journal of Luminescence, 2002,23(4): 389-392DOI:
ZnO thin film is a promising material for short-wave laser and LBD etc
due to its wide band gap (3.37eV) and high exciton binding energy (60meV) at room temperature. But its photoluminescent properties received little attention in the past years
because there was unavoidably more or less defection in this material produced by traditional methods. To solve this problem
its preparation techniques need to be further improved. In recent years
some new methods were introduced to produce ZnO thin film such as MOCVD
MBE and so on. ZnO becomes hotpoint in all kinds of researches
especially in designing optoelectronic devices. In our work
the ZnO thin films were deposited on quartz substrates by radio frequency magnetic sputtering. We reported the measurements of XRD patterns
absorption spectra and photoluminescent spectra of our samples at room temperature. We also discussed the effect caused by the change of the ratio of oxygen to argon on the qualities of thin films. The ratio of 20:70 was found optimal. From XRD patterns
we can see our samples have good crystalline. On the other hand
ZnO thin film showed strong absorption in the UV region. The photoluminescence was correspondingly strong UV emission peaked at 392nm. It is obvious that near band emission is dominant in various transitions. High structural perfection of our sample was shown in these figures. The state of abundant Zn in ZnO thin film was greatly improved.