ZnO thin film is a promising material for short-wave laser and LBD etc

due to its wide band gap (3.37eV) and high exciton binding energy (60meV) at room temperature. But its photoluminescent properties received little attention in the past years

because there was unavoidably more or less defection in this material produced by traditional methods. To solve this problem

its preparation techniques need to be further improved. In recent years

some new methods were introduced to produce ZnO thin film such as MOCVD

MBE and so on. ZnO becomes hotpoint in all kinds of researches

especially in designing optoelectronic devices. In our work

the ZnO thin films were deposited on quartz substrates by radio frequency magnetic sputtering. We reported the measurements of XRD patterns

absorption spectra and photoluminescent spectra of our samples at room temperature. We also discussed the effect caused by the change of the ratio of oxygen to argon on the qualities of thin films. The ratio of 20:70 was found optimal. From XRD patterns

we can see our samples have good crystalline. On the other hand

ZnO thin film showed strong absorption in the UV region. The photoluminescence was correspondingly strong UV emission peaked at 392nm. It is obvious that near band emission is dominant in various transitions. High structural perfection of our sample was shown in these figures. The state of abundant Zn in ZnO thin film was greatly improved.