DENG Yun-long, LIAO Chang-jun, LIU Song-hao, FAN Guang-han, WEN Shang-sheng. A Theoretic Analysis of Electrical Injection and Optical Output Process in High Brightness Light Emitting Diodes[J]. Chinese Journal of Luminescence, 2002,23(3): 255-260
DENG Yun-long, LIAO Chang-jun, LIU Song-hao, FAN Guang-han, WEN Shang-sheng. A Theoretic Analysis of Electrical Injection and Optical Output Process in High Brightness Light Emitting Diodes[J]. Chinese Journal of Luminescence, 2002,23(3): 255-260DOI:
A modeling of the electrical injection and the optical output of a typical high brightness LED indicates an important influence by top layer thickness.Not only the high reflective index of the top layer which limits the inner emitting angle of less than 16.6°
but also light area where the light emitted directly under the electrode will be total reflected back or be absorbed .As increasing the thickness at the top layer
the current spreads via diffusion and electrical density distributed uniformly on the whole emitting area
where most of the emitting area has been outside of the shade of the electrode.The thicker the top layer is
the easier for current spread and light to emit out.A method of high brightness light emitting diodes precisely design was provided in this paper.A current density function
which is symmetrical because the electrode is round
was deduced with perfect p n model.From the calculated curve of current density distribution
the one of 50μm top layer is more uniform than that of 5μm one.On other words
as increasing the thickness at the top layer
more current was spread outside of the shade of the electrode.LED optical output can be divided into edge emitting and surface emitting.A thick top layer is very useful for increasing LED edge emitting and decreasing no light area in surface emitting where was shaded by electrode.The calcu lated result shows that LED with a top layer between 49 and 98μm will make maximal optical output.The processes of electrical injection and optical out as basis
external quantum efficiency of LED with any thickness of top layer can be calculated.The theoretical calculated curve indicates external quantum efficiency vs.the thickness of LED top layer rise the slope sharply before 20μm
and then become a slight slope.If the top layer is thick enough
current in active layer distribution uniform completely
maximal optical output
and internal quantum efficiency being 1
the maximal external quantum efficiency of this type of LED is about 12.1%.