BAO Chun-yu, LI Zi-lan, CHEN Zhi-zhong, QIN Zhi-xin, HU Xiao-dong, TONG Yu-zhen, DING Xiao-min, YANG Zhi-jian, ZHANG Guo-yi. Comparison of Properties of Metal-semiconductor-metal GaN Ultraviolet Photodetectors Operated at 94K Low Temperature and at Room Temperature[J]. Chinese Journal of Luminescence, 2002,23(5): 461-464
BAO Chun-yu, LI Zi-lan, CHEN Zhi-zhong, QIN Zhi-xin, HU Xiao-dong, TONG Yu-zhen, DING Xiao-min, YANG Zhi-jian, ZHANG Guo-yi. Comparison of Properties of Metal-semiconductor-metal GaN Ultraviolet Photodetectors Operated at 94K Low Temperature and at Room Temperature[J]. Chinese Journal of Luminescence, 2002,23(5): 461-464DOI:
Metal-semiconductor-metal ultraviolet photodetectors have been fabricated on undoped GaN films grown by metalorganic chemical-vapor deposition. Response dependence on wavelength
voltage bias and chopper frequency has been extensively investigated both at room tempe rature and at 94K low temperature. The results show that the response time drops by more than three levels of magnitude when the incident light's wavelength increases from 360.to 450nm at 94K. For the incident light less than 360nm
its response time at 94K is about one level greater than that at room-temperature. An increase in response time was also observed at 94K.