MOCVD外延Hg1-xCdxTe/Cd1-yZnyTe薄膜的光致发光

黄晖; 许京军; 王吉有; 张存洲; 姬荣斌; 潘顺臣; 张光寅

doi:null

您当前的位置：

首页 >

文章列表页 >

MOCVD外延Hg_1-xCd_xTe/Cd_1-yZn_yTe薄膜的光致发光

学术论文 | 更新时间：2020-08-11

- MOCVD外延Hg_1-xCd_xTe/Cd_1-yZn_yTe薄膜的光致发光
- Photoluminescence ofHg_1-xCd_xTe/Cd_1-yZn_yTe Epitaxial Films Grown by MOCVD
- 发光学报 2002年23卷第2期页码：133-136
- 作者机构：
  
  1. 昆明物理研究所, 云南昆明650223
  2. 南开大学物理科学学院光子学中心天津,300071
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O472.3
- 收稿日期：2001-09-20，
  
  修回日期：2001-10-25，
  
  纸质出版日期：2002-03-20
- 稿件说明：
移动端阅览
黄晖, 许京军, 王吉有, 张存洲, 姬荣斌, 潘顺臣, 张光寅. MOCVD外延Hg1-xCdxTe/Cd1-yZnyTe薄膜的光致发光[J]. 发光学报, 2002,23(2): 133-136

HUANG Hui, XU Jing-jun, WANG Ji-you, ZHANG Cun-zhou, JI Rong-Bin, PAN Shun-chen, ZHANG Guang-yin. Photoluminescence ofHg1-xCdxTe/Cd1-yZnyTe Epitaxial Films Grown by MOCVD[J]. Chinese Journal of Luminescence, 2002,23(2): 133-136
黄晖, 许京军, 王吉有, 张存洲, 姬荣斌, 潘顺臣, 张光寅. MOCVD外延Hg1-xCdxTe/Cd1-yZnyTe薄膜的光致发光[J]. 发光学报, 2002,23(2): 133-136 DOI：

HUANG Hui, XU Jing-jun, WANG Ji-you, ZHANG Cun-zhou, JI Rong-Bin, PAN Shun-chen, ZHANG Guang-yin. Photoluminescence ofHg1-xCdxTe/Cd1-yZnyTe Epitaxial Films Grown by MOCVD[J]. Chinese Journal of Luminescence, 2002,23(2): 133-136 DOI：

摘要

利用Raman显微镜系统对两块用MOCVD方法在Cd

0.96

0.04

Te衬底上生长的Hg

0.8

0.2

Te外延薄膜样品在光谱范围50～5000cm

-1

进行了测量

在其中的一块样品上首次发现了143eV至193eV范围内出现的具有周期结构的光致发光峰

该发光峰对应的能带中心位于Hg

0.8

0.2

Te外延层导带底上方173eV

在另外一块外延薄膜样品中仅观察到四个Raman散射峰

没有周期结构的发光峰。为了分析上述光致发光的起因

对两块样品进行了X射线的双晶回摆曲线样品结构分析

得出样品在143eV至193eV范围的光致发光峰是由于改进MOCVD生长工艺提高了样品的结构质量所致

通过分析指出该光致发光峰是来源于Hg

0.8

0.2

Te外延层中的阴性离子空位的共振能级。

Abstract

The fundamental physical properties of Hg

1-x

Te make it an excellent candidate material for infrared photoelectric detectors. Recently

much attention has been paid to Hg

1-x

films grown by different epitaxial techniques on the substrate Cd

1-y

Te due to the possibility of fabricating large area detectors as well as high precision focal plane array detectors. Investigations of the phonon vibration spectra for Hg

1-x

are necessary to understand the lattice dynamics and to obtain structure information about the material. In this paper

the micro-Raman spectra of two MOCVD Hg

1-x

/Cd

1-y

Te epitaxial film samples were measured at room temperature within the spectral range of 50cm

-1

to 5000cm

-1

. The quasi-periodically micro-photoluminescent structure in the range from 50cm

-1

to 5000cm

-1

was observed for the first time in one sample. The micro-photoluminescence results show that there is an anion vacancy resonance level far up in the conduction band

about 1.73eV above the conduction band edge in Hg

1-x

/Cd

1-y

Te epitaxial film. In the micro-Raman spectrum of another sample four main Raman peaks at 125.3cm

-1

140.8cm

-1

164.8cm

-1

and 265.2cm

-1

were observed. The Raman peak of 125.3cm

-1

belongs to HgTe-like TO

phonon vibrational mode

140.8cm

-1

belongs to HgTe-like LO

phonon vibrational mode

164.8cm

-1

occurs due to CdTe-like LO

phonon vibration

and 265.2cm

-1

come from the two-phonon mode TO

(HgTe-like)+LO

(HgTe-like). At the same time

X-ray double-crystal rocking curves were also obtained in order to check the structure quality of two samples. Our results definitely show that the quasi-periodically micro-photoluminescent structure is mainly due to the improvement in quality of the Hg

1-x

Te epilayer. The experimental results also demonstrate that micro-photoluminescence technique in micro-Raman system seems to be a good convenient

simple

contactless method to characterize the perfection of Hg

1-x

Te epitaxial films.

关键词

Keywords

references

浏览量

127

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

MOCVD法制备Cu掺杂ZnO薄膜

有机源载气对MOCVD生长InGaN薄膜的影响研究

MOCVD生长GaN：Si单晶膜的研究

MOCVD生长的GaN单晶膜的蓝带发光研究

GaInSb/GaSb量子阱结构的低温光致发光谱