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1. r Experimental Physikder Universitat Hamburg,Germany
2. 中国科学技术大学国家同步辐射实验室, 安徽合肥 230029
3. 中国科学技术大学国家同步辐射实验室, 安徽合肥 230029
4. Institut f,252
收稿日期:2000-08-11,
修回日期:2000-11-27,
纸质出版日期:2001-05-30
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张国斌, 施朝淑, 韩正甫, 石军岩, 林碧霞, Kirm M, Zimmerer G. Si基沉积ZnO薄膜的光谱特性[J]. 发光学报, 2001,22(2): 157-160
ZHANG Guo-bin, SHI Chao-shu, HAN Zheng-fu, SHI Jun-yan, LIN Bi-xia, Kirm M, Zimmerer G. Photoluminescence Properties of ZnO Films Deposited on Si Substrates[J]. Chinese Journal of Luminescence, 2001,22(2): 157-160
张国斌, 施朝淑, 韩正甫, 石军岩, 林碧霞, Kirm M, Zimmerer G. Si基沉积ZnO薄膜的光谱特性[J]. 发光学报, 2001,22(2): 157-160 DOI:
ZHANG Guo-bin, SHI Chao-shu, HAN Zheng-fu, SHI Jun-yan, LIN Bi-xia, Kirm M, Zimmerer G. Photoluminescence Properties of ZnO Films Deposited on Si Substrates[J]. Chinese Journal of Luminescence, 2001,22(2): 157-160 DOI:
利用同步辐射真空紫外光研究了Si基沉积ZnO薄膜的发射光谱、激发光谱及其温度依赖。首次观测到高于ZnO禁带宽度的发射带(290nm)
并初步指定其来源。
Recently
ZnO film has attracted much interest because of its huge potential commercial application in ultraviolet (UV) laser since its optically pumped UV lasing was found at room temperature
and the photoluminescence (PL) properties of ZnO films have been studied widely.Some early works indicate that the peak excitation of the UV band should be in the vacuum ultraviolet (VUV) region and the intensity of Xe lamp is not enough to excite them.In the present work
a detailed study on the PL properties of ZnO film deposited on Si substrates by reactive DC sputtering was carried out with a synchrotron radiation (SR) light source for the first time to our knowledge. The excitation and emission spectra were measured at HASYLAB
DESY at Hamburg
Germany.The excitation spectra show a strong excitation band around 195nm related to 390nm emission band.Under SR vacuum ultraviolet excitation
a new emission band peaked at 290nm was found for the first time
besides the ultraviolet emission band (390nm) and green band (520nm). Since the energy of 290nm emission photon is larger than the band gap energy of ZnO (3.2eV)
it does not originate from the band gap radiative recombination or intrinsic defects
as well as impurities.The excitation spectra of the two emission bands are very similar to each other
which also prove that the 290nm emission originates from ZnO film itself.In addition
it seems also not come from the Si substrate
because the VUV light is strongly absorbed by ZnO film (0.2μm) and can not reach the substrate. In conclusion
the newly found emission band peaked at 290nm indicates that there are some structures in the conduct band of ZnO film.The excitation spectra show that the strong excitation bands are in VUV region (photon energy higher than 6eV)
but almost no excitation in the lower energy region.The strange behaviors in the PL properties of ZnO film may be one of the reasons that few report is found in the past
and also imply that more detailed experimental as well as theoretical studies should be carried out in the future.
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