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中国科学技术大学国家同步辐射实验室 合肥,230029
收稿日期:2000-08-11,
修回日期:2000-11-23,
纸质出版日期:2001-05-30
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周映雪, 汪东升, 张新夷. BaFBr中O<sup>2-</sup>的发光研究[J]. 发光学报, 2001,22(2): 164-166
ZHOU Ying-xue, WANG Dong-sheng, ZHANG Xin-yi. Luminescence of Oxygen-impurity in BaFBr[J]. Chinese Journal of Luminescence, 2001,22(2): 164-166
通过比较紫外和真空紫外光辐照前后
BaFBr以及BaFBr:O样品的发光
研究氧在光激励发光材料中所起的作用。未经辐照的样品
在240nm光激发下
BaFBr:O有峰值为330、345、540nm以及440、480、502nm肩峰的发光
而对BaFBr却探测不到发光。辐照后
在240nm激发下
BaFBr以及BaFBr:O样品都可观测到相近的发光
只是相对强度略有不同
指出样品的发光来源于氧。在100~400nm范围内
BaFBr以及BaFBr:O样品的吸收谱中存在四个宽的吸收带
表明紫外和真空紫外光可激发或电离占据氟离子格位的O
2-
离子
氧在BaFBr光激励发光材料中可充当空穴陷阱。
The BaF X(X= Cl
Br
I):Eu
2+
is a kind of photo stimulated luminescence (PSL) material.The electron and hole traps play an important role in the mechanism of PSL.Both electron and hole leave respectively their traps by photo stimulation
then recombine with light emission at the luminescence center.In BaF X :Eu
2+
the vacancy of anion will attract an electron and form the F colour center which could be electron trap.Nevertheless
what will be the hole trap? It is not clear up to now.In this paper
the emission and absorption spectra of BaFBr and BaFBr:O
2-
samples have been investigated in order to ascertain the origin of hole traps in BaF X :Eu
2+
.In BaFBr:O
2-
sample
in which the concentration of O
2-
is about 8×10
-3
at%
the O
2-
ions occupy the site of fluorine ion.At room temperature
without pre irradiation
there are some emission peaks (at 330
345 and 540nm
respectively) and shoulders (near 440
480 and 502nm
respectively) in the emission spectra of BaFBr:O
2-
under the excitation of 240nm
as shown in Fig.1.But
no luminescence can be observed for BaFBr.However
for both BaFBr and BaFBr:O
2-
similar luminescence can be seen
after the pre irradiation with ultraviolet and vacuum ultraviolet(VUV) light of 50~400nm and/or 185nm
under the exitation of 240nm.Their emission peaks locate at 332
348
390
442
467
502 and 540nm approximately
although
the relative intensities of these peaks have minor differences for both samples(Fig.2).We believe that the origin of the luminescence of BaFBr and BaFBr:O
2-
is due to the oxygen impurity. Furthermore
taking the reflection spectrum of Au thin film as reference
the reflection spectra of BaFBr and BaFBr:O
2-
samples are measured in the range of 100~400nm at U10B station of the National Synchrotron Radiation Laboratory(NSRL).The absorption spectra are calculated from these reflection spectra by using K-K relation.It is found that there are four broad absorption sub bands in the absorption spectra of BaFBr
as well as in that of BaFBr:O
2-
(Fig.4).It means that the electron can be excited or ionized from the oxygen impurity into F center by UV and VUV light.These results support that the oxygen impurity could act as the hole trap in PSL materials.
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