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1. 中国科学院激发态物理开放研究实验室, 中国科学院长春光学精密机械与物理研究所,吉林 长春,130021
2. 上海大学嘉定校区材料科学系 上海,201800
收稿日期:2000-08-29,
修回日期:2001-02-20,
纸质出版日期:2001-05-30
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初本莉, 刘行仁, 王晓君, 张家骅, 蒋雪茵. 硅酸锶中Pr<sup>3+</sup>的4f5d态的光谱特性及Pr<sup>3+</sup>→Gd<sup>3+</sup>的能量传递[J]. 发光学报, 2001,22(2): 187-191
CHU Ben-li, LIU Xing-ren, WANG Xiao-jun, ZHANG Jia-hua, JIANG Xue-yin. Luminescence Properties of Pr<sup>3+</sup> and Energy Transfer Characteristics of Pr<sup>3+</sup>→Gd<sup>3+</sup> in Sr<sub>2</sub>SiO<sub>4</sub>[J]. Chinese Journal of Luminescence, 2001,22(2): 187-191
初本莉, 刘行仁, 王晓君, 张家骅, 蒋雪茵. 硅酸锶中Pr<sup>3+</sup>的4f5d态的光谱特性及Pr<sup>3+</sup>→Gd<sup>3+</sup>的能量传递[J]. 发光学报, 2001,22(2): 187-191 DOI:
CHU Ben-li, LIU Xing-ren, WANG Xiao-jun, ZHANG Jia-hua, JIANG Xue-yin. Luminescence Properties of Pr<sup>3+</sup> and Energy Transfer Characteristics of Pr<sup>3+</sup>→Gd<sup>3+</sup> in Sr<sub>2</sub>SiO<sub>4</sub>[J]. Chinese Journal of Luminescence, 2001,22(2): 187-191 DOI:
本文研究了室温下Pr
3+
在Sr
2
SiO
4
中的发射光谱和激发光谱
在激发光谱中
最低激发峰位置低于1S0能级位置
属于5d态的吸收。发射光谱主要由5d→4f的跃迁构成
未观测到Pr
3+
的
3
P
0
和
1
D
2
的辐射跃迁。Pr
3+
的掺杂浓度在001mol左右时
其发射强度接近最大。在Sr
2
SiO
4
:Pr
3+
Gd
3+
体系中
Pr
3+
的5d→
3
H
4
的跃迁与Gd
3+
的
8
S
7/2
→
6
I能级的吸收跃迁相匹配
因此发生了Pr
3+
→Gd
3
的高效无辐射能量传递。固定Pr
3+
的浓度时
随着体系中Gd
3+
离子浓度的增加
Gd
3+
的发射强度也随之增强
同时
Pr
3+
的发射强度则逐渐下降。
The samples in this paper were synthesized by high temperature solid state reaction technique. The luminescence of the 4f5d states of Pr
3+
doped in Sr
2
SiO
4
and the characteristics of the energy transfer from Pr
3+
to Gd
3+
have been studied. In Sr
2
SiO
4
the energy level of the lowest 4f5d band of the Pr
3+
located at about 36000cm
-1
which was much lower than that of the free ions
and was below the
1
S
0
energy level of the 4f
2
configuration
so when excited into the 4f5d band
there was possibility to get the radiation transition of the 4f5d states. The energy gap between the lowest 4f5d band and the
3
P
2
level was about 14000cm
-1
which was big enough that the non radiation from the 4f5d band to
3
P
2
level was so small
the radiation transitions from
3
P
0
and
1
D
2
level was unobserved
which indicated that the efficiencies of the 4f5d→4f radiative transition was high. From 0mol to 0.01mol of Pr
3+
in Sr
2
SiO
4
the emission strength became stronger with increasing the Pr
3+
concentration. From 0.01mol to 0.03mol
the emission strength was almost constant
which was due to the concentration quenching of Pr
3+
in Sr
2
SiO
4
. When excited by 240nm
the emission spectrum of Pr
3+
was consisted of three bands
which was from 260nm to 440nm
the three peaks were at about 276
318 and 396nm which corresponded to the radiation transition from the lowest 4f5d band to
3
H
4
3
H
6
and
1
G
4
respectively. The excitation spectrum was from 200nm to 260nm
when employed Gaussian fit
three bands could be got
the peaks were at about 218
240 and 250nm
respectively. In Sr
2
SiO
4
Pr
Gd
when excited by 240nm
the 311nm emission of Gd
3+
was observed which could not be got in Sr
2
SiO
4
:Gd
the energy transfer from Pr
3+
to Gd
3+
happened. There were overlap between the transition of the 4f5d states to 3H 4 of Pr
3+
and the absorptive transition of the Gd
3+
8
S
2/7
→
6
I
so the
6
I levels took part in the energy transfer process. Because the oscillator strength of the
6
I levels was 10~20 times stronger than that of the
6
P levels
the energy transfer from Pr
3+
to Gd
3+
was more efficient than that of only the Gd
3+
6P levels was included in the energy transfer process. When the concentration of Pr
3+
was constant
the Pr
3+
emission strength became weaker and the Gd
3+
emission strength became stronger with increasing the Gd
3+
concentration. When the Gd
3+
concentration is bigger than 0.07mol
the concentration quenching happened and the Gd
3+
emission strength decreased with increasing the Gd
3+
concentration.
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