Znic oxide is a Ⅱ-Ⅵ compound semiconductor with wurtzite structure.This film has many applications due to its large band gap

high exciton binding energy

positive optical and electrical properties. Thin films of zinc oxide have been prepared using various deposition methods

including RFsputtering

metal organic chemical deposition (MOCVD)

pulsed laser deposition (PLD)

molecular beam epitaxy (MBE)

sol-gel

and so forth.ZnO thin films prepared by those methods usually exhibit (002) orientation with

c

-axis perpendicular to the substrate due to the lower surface free energy for (002) plane.The

a-b

axis preferred orientation is seldom reported because of it’s difficult to be formed.But as a novel preferred orientation

it maybe bring us new applications such as surface acoustic wave device (SAW).The single source chemical vapor deposition (SS CVD) technique is a useful method to form films

because it employs comparatively simple deposition equipment

and generate thin films at moderate temperatures and low vacuum ambient.We reported that ZnO thin film with

a-b

axis orientation was prepared by single source chemical vapor deposition (SS CVD) using Zn

4

(OH)

2

(O

2

CCH

3

)

6

·2H

2

Oas the precursor.The deposited ZnO layers on Si (100) semiconductor substrate were investigated with respect to the crystalline phase by X-ray diffraction (XRD)

the micro-morphology by atom force microscope (AFM)

and the stoichiometry by X-ray photoelectron spectroscopy (XPS). The results show that ZnO thin film with

a-b

axis was prepared under low substrate temperature of 350℃.The weak peak of ZnO (002) appeared while the substrate temperature enhanced to 450℃.The average grain size of ZnO is about 170 nm. ZnO films are stoichiometric with O/Zn atomic ratio (0.985) which very close to that of ZnO single crystal.