High power diode lasers have been used in printing

defense

medical

and materials processing because of their compact size

low cost per Watt

and high electricity-optics converting efficiency. InGaAs/InGaAs Pstrained-compensated single-quantum well structure with an emission-wavelength of 808 nm was grown.The back HRcoating was Al

2

O

3

/5 (HfO

2

/SiO

2

)/HfO

2

and the front AR coating was Al

2

O

3

. Anovel water-cooler and heat-sink with new structure developed by ourselves performed efficiently. Driving by the SM-15 continuous laser power produced by δ Company of German

the CW module performed excellently and their lifetimes are up to 11732 hours under the room temperature. As a result

this reached the leading level domestically. The highest electricity-optics converting efficiency is up to 41.3%.The CW output power of the module reached to 46.2 Wat a current of 50 A.The slope efficiency is 1.15 W/Aand the central emission wavelength is 810 nm with a FWHM of 3 nm.808 nm high power semiconductor lasers are ideal light pump source for Nd:YAGlaser. Development of high-power semiconductor laser arrays will broaden the application of the semiconductor lasers in industry

medical treatment and display.