Zn1-xMgxO薄膜p型导电和光学性能

张霞; 李效民; 陈同来; 于伟东; 高相东; 张灿云; 赵俊亮

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Zn_1-xMg_xO薄膜p型导电和光学性能

研究论文 | 更新时间：2020-08-11

- Zn_1-xMg_xO薄膜p型导电和光学性能
- p-type Conduction and Optical Properties of Zn_1xMg_xO Thin Films Grown by Ultrasonic Spray Pyrolysis
- 发光学报 2006年27卷第4期页码：503-508
- 作者机构：
  
  1. 中国科学院, 研究生院, 北京, 100049
  2. 中国科学院上海硅酸盐研究所, 高性能陶瓷和超微结构国家重点实验室上海,200050
- 作者简介：
- 基金信息：
  
  国家自然科学基金(90401010)();上海市科技发展基金(046105009)();上海市应用材料研究与发展基金(0516)资助项目()
- DOI：
  中图分类号： O472.4;O482.31
- 收稿日期：2005-12-20，
  
  修回日期：2006-03-01，
  
  纸质出版日期：2006-07-20
- 稿件说明：
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张霞, 李效民, 陈同来, 于伟东, 高相东, 张灿云, 赵俊亮. Zn1-xMgxO薄膜p型导电和光学性能[J]. 发光学报, 2006,27(4): 503-508

ZHANG Xia, LI Xiao-min, CHEN Tong-lai, YU Wei-dong, GAO Xiang-dong, ZHANG Can-yun, ZHAO Jun-liang. p-type Conduction and Optical Properties of Zn1xMgxO Thin Films Grown by Ultrasonic Spray Pyrolysis[J]. Chinese Journal of Luminescence, 2006,27(4): 503-508
张霞, 李效民, 陈同来, 于伟东, 高相东, 张灿云, 赵俊亮. Zn1-xMgxO薄膜p型导电和光学性能[J]. 发光学报, 2006,27(4): 503-508 DOI：

ZHANG Xia, LI Xiao-min, CHEN Tong-lai, YU Wei-dong, GAO Xiang-dong, ZHANG Can-yun, ZHAO Jun-liang. p-type Conduction and Optical Properties of Zn1xMgxO Thin Films Grown by Ultrasonic Spray Pyrolysis[J]. Chinese Journal of Luminescence, 2006,27(4): 503-508 DOI：

摘要

采用超声喷雾热分解(Ultrasonic Spray Pyrolysis

USP)方法

以醋酸锌、醋酸镁、醋酸铵、氯化铝的混合水溶液为前驱溶液

在单晶Si(100)衬底上制备了ZnO

0.81

0.19

N-Al共掺杂ZnO和N-Al共掺杂Zn

0.81

0.19

O薄膜。以X射线衍射(XRD)、场发射-扫描电镜(FE-SEM)、霍尔效应(Hall-effect)、光致发光(Photoluminescence

PL)谱等手段研究了薄膜的晶体结构、表面形貌、电学性能、光学性能和带隙变化。电学测试结果表明

未掺杂ZnO及Zn

0.81

0.19

O薄膜为n型导电;而N-Al共掺杂ZnO和N-Al共掺杂Zn

0.81

0.19

O薄膜呈p型导电。Zn

0.81

0.19

O和N-Al共掺杂Zn

0.81

0.19

O(p型)薄膜在维持ZnO纤锌矿结构的前提下

光学带隙随Mg掺杂量增加而增大。初步结果显示

优化工艺参数下通过Mg掺杂制备光学带隙可调的p型Zn

0.81

0.19

O薄膜

对于试制Zn

1-x

O基同质p-n结、短波长(紫外、深紫外)器件等方面有重要意义。

Abstract

ZnO

N-Al codoped ZnO

0.81

0.19

N-Al codoped Zn

0.81

0.19

O thin films have been deposited on Si(100) substrates as the precursory sources of Zn(CH

COO)

Mg(CH

COO)

COO and AlCl

aqueous solutions using ultrasonic spray pyrolysis(USP) method.The crystalline structure

morphology images

electrical

optical properties and band gap of the films are characterized by X-ray diffraction(XRD)

field emission-scan electron microscopic image(FE-SEM)

Hall-effect measurement and photoluminescence(PL). The XRD patterns reveal that all the films are composed of wurtzite-type ZnO phase.No peak originating from other compounds is detected except those of ZnO.From the SEM images

we can see that all the films present good morphologic uniformity

smooth dense surface

no visible pores and defects over the film.Apart from that

there are some grain morphology differences between Zn

0.81

0.19

O and p-Zn

0.81

0.19

O films

perhaps due to the different nucleation modes resulted from different dopants.Hall-effect measurement results indicate that ZnO and Zn

0.81

0.19

O are n-type

while N-Al codoped ZnO and N-Al codoped(Zn

0.81

0.19

O) exhibit p-type conductivity.From the PL peaks of ZnO and Zn

0.81

0.19

it can be seen that Zn

0.81

0.19

O is tuned into shorten wavelength than pure ZnO.Furthermore

the photoluminescence peak of p-Zn

0.81

0.19

O film (exhibits) also blue-shift behavior from 378 to 356 nm compared with p-ZnO film.Accordingly

the band gap of p-Zn

0.81

0.19

O film increases with the Mg content increases compared with p-ZnO film.In addition

The growth rate dependence of electrical and PL properties in p-Zn

1-x

O films are also(discussed.) Only upon moderate growth rate

the p-Zn

0.81

0.19

O film exhibits both good electrical and(excellent) PL(properties.) In conclusion

optimal growth conditions confirm that Zn

0.81

0.19

O films

both wide band gap and p-type conductivity

are successfully fabricated by codoping of N and Al using USP method

which are of(significant) importance for practical(applications) of Zn

1-x

O p-n homojunctions and Zn

1-x

O-based UV optoelectrical devices.

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