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1. 内蒙古民族大学, 物理与机电学院, 内蒙古, 通辽, 028043
2. 河北科技师范学院, 数理系, 河北, 秦皇岛, 066004
收稿:2005-08-20,
修回:2005-11-24,
纸质出版:2006-07-20
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李志新, 肖景林. 半导体量子点中弱耦合激子的性质[J]. 发光学报, 2006,27(4): 457-462
LI Zhi-xin, XIAO Jing-lin. Properties of Weak-coupling Exciton in Polar Semiconductor Quantum Dot[J]. Chinese Journal of Luminescence, 2006,27(4): 457-462
研究了抛物型半导体量子点中弱耦合激子的性质
在有效质量近似下
采用线性组合算符和幺正变换的方法
导出了抛物型半导体量子点中激子的基态能量。讨论了量子点半径和受限强度对半导体量子点中弱耦合激子的基态能量的影响。以GaAs半导体为例进行了数值计算
结果表明:在弱耦合情况下
重空穴激子和轻空穴激子的基态能量随量子点半径的减小而增大
随受限强度ω
0
的增强而增大。
Since Haken first investigated the problem of exciton-phonon interaction in polar semiconductor
this field has been greatly studied by other theoretical and experimental methods.Current carrier is restricted at three directions therefore the superposition of hole-electron louds is greatly enhanced
and that lead to the strengthen of coulomb binding energy and oscillator strength
so the effect of exciton play a very important role in semiconductor quantum dot.For the complexing of the exciton's structure
a variety of theoretical model have been adopted to research exciton in semiconductor quantum dot.Such as
under the effectivemass appro-(ximation)
the energy of the ground state and the binding energy of exciton have been calculated by literature in spheroidal
circular and cube quantum dots without considering the effect of the surface polaron.Lin and Zunger using PM method studied the band gap of spheroidal circular and gamma matrix in SI quantum dot.Xie
et al
.studied the properties of exciton in semiconductor quantum dot by using the method of few-body physics.Yosuke Kayanuma and Lavanya
et al
.discussed the quantum sizes effect of exciton in a spherical quantum dot by using variational calculational method.The effective Hamiltonian of weak and middle-coupling surface excitons of the pure 2D polar crystal are obtained by using Huybrecht's linear-combination operator method by Gu
et al
.Under parabolic energy band structure
EMA method been mostly used for its intuition property.In this paper
within the effective mass approximation
the energy of the ground state in GaAs quantum dot is calculated by using linear-combination operator method and only considering the influence of the(electron)-phonon-weak coupling.The properties of exciton in parabolic semiconductor quantum dot are studied by using the methods of a linear-combination operator and unitary transformation.Within the effective-mass approximation
numerical calculations are performed for GaAs semiconductor.The result illustrates that for weak-coupling
the energies of the ground state of the light-hole and the heave-hole excitons will increase with the decreasing of the radius of quantum dot and increase with the increasing ω
0
of the confinement strength.
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