The different preparation method has tremendous influence on the microstructure and the performance of ZnO-based thin films. The exploration of new method which made low cost and high quality sample seems to be very important now. Considering the practical application

searching a higher Curie temperature thin magnetic semiconductor material also has an important value. Using PVA method

the Co

2+

and Fe

3+

ions doped ZnO diluted magnetic semiconductor thin films were prepared. This method which has many advantages:such as simple operation

short sample preparation time

low cost

may conveniently be used to prepare big area semiconductor thin film. At the same time

PVAmethod can be used to prepare uniform and high purity sample

also has advantageous for the doping control. The structure of Zn

0.88

Co

0.12

O thin films under different annealing time and its photoluminescence were investigated. Different preparation conditions will influence on the microstructure

ferromagnetism and photoluminescence of samples obviously. Using PVA method we prepared the Zn

0.88

Co

0.12

O sample which has obviously (002) orientation. We also analyzed the origin of the ultraviolet peak and the blue light peak. Using vibrating sample magnetometer (VSM) we found that both Zn

0.88

Co

0.12

O and Zn

0.88

(Co

0.5

Fe

0.5

)

0.12

O thin films have ferromagnetism at room temperature

and the Zn

0.88

Co

0.12

O thin film has higher ferromagnetic intensity than that of the Zn

0.88

(Co

0.5

Fe

0.5

)

0.12

O thin film. Through the structure analysis and the computation

we confirmed that the magnetic ions entered into the ZnO crystal structure indeed.