
浏览全部资源
扫码关注微信
1. 厦门大学, 物理系, 福建, 厦门, 361005
2. 厦门大学, 半导体光子学研究中心,福建 厦门,361005
收稿日期:2005-12-12,
修回日期:2006-03-12,
纸质出版日期:2006-09-20
移动端阅览
张华, 冯夏, 康俊勇. 硅酸锌的电子结构[J]. 发光学报, 2006,27(5): 750-754
ZHANG Hua, FENG Xia, KANG Jun-yong. Electronic Structures of Zn<sub>2</sub>SiO<sub>4</sub>[J]. Chinese Journal of Luminescence, 2006,27(5): 750-754
采用局域密度泛函理论和第一性原理的方法
计算四方结构和六角结构硅酸锌的平衡晶格常数、电子态密度和能带结构。计算结果表明
四方结构硅酸锌的平衡晶格常数为0.71048nm
六角结构为1.40877nm
两者与实验值的误差均在1%左右。态密度图显示
主要电子态分布在-7.18~0.00eV和2.79~10.50eV两个能量区域;同时
不同元素电子对导带和价带有不同贡献
其中氧的p态电子对价带顶贡献最大
锌的s态电子对导带底贡献最大。能带计算表明
四方与六角结构硅酸锌均为直接带隙半导体
禁带宽度分别为2.66
2.89eV。
The electronic structures of the tetragonal and hexagonal Zn
2
SiO
4
with super cells of 28 and 126 atoms were calculated by Vienna ab-initio Simulation Package with ultrasoft pseudopotentials.The calculated equilibrium lattice constants agree much well with the experimental values.Using the optimized equilibrium lattice constants
the densities of states and energy band structures were further calculated.The total densities of states of both structures show the valence and conduction bands.By analyzing the partial densities of states
the contributions of different electron states in different atoms are estimated.The d states of Zn and p states of Omostly contribute to the top of the valence band
and the s states of Zn make major effects on the bottom of conduction band.The similar densities of states in the mass of the two structures suggest that both structures have the similar electronic and optical properties.Moreover
the calculated energy band structures show that the tetragonal and hexagonal Zn
2
SiO
4
have direct energy band gaps
which are promising semiconductors for short wavelength optoelectronic devices.
0
浏览量
189
下载量
3
CSCD
关联资源
相关文章
相关作者
相关机构
 京公网安备11010802024621