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1. 上海大学, 材料科学与工程学院 上海,201800
2. 上海广电NEC液晶显示器有限公司 上海,201108
收稿日期:2006-03-14,
修回日期:2006-04-24,
纸质出版日期:2006-09-20
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李瑛, 王文根, 邵明, 王秀如, 汤昊, 孙润光. 纯化9,10-二萘蒽对OLED器件光电性能的影响[J]. 发光学报, 2006,27(5): 670-674
LI Ying, WANG Wen-gen, SHAO Ming, WANG Xiu-ru, TANG Hao, SUN Run-guang. Purity Effects on the Electroluminescent Performance of<sub>9</sub>,10-Di(2-naphthyl)anthracene[J]. Chinese Journal of Luminescence, 2006,27(5): 670-674
李瑛, 王文根, 邵明, 王秀如, 汤昊, 孙润光. 纯化9,10-二萘蒽对OLED器件光电性能的影响[J]. 发光学报, 2006,27(5): 670-674 DOI:
LI Ying, WANG Wen-gen, SHAO Ming, WANG Xiu-ru, TANG Hao, SUN Run-guang. Purity Effects on the Electroluminescent Performance of<sub>9</sub>,10-Di(2-naphthyl)anthracene[J]. Chinese Journal of Luminescence, 2006,27(5): 670-674 DOI:
合成了高稳定性蓝光主体材料9
10-二萘蒽(ADN)
研究材料纯化对合成材料光电性能的影响。为进一步分析材料经升华提纯对有机电致发光器件性能的影响
以提纯前后ADN为发光层
以NPB为空穴传输层
分别制作双层器件Ⅰ(提纯前)和器件Ⅱ(提纯后)
器件结构为ITO(100nm)/NPB(40nm)/ADN(30nm)/Alq
3
(20nm)/LiF(1nm)/Al(100nm)
结果表明提纯后材料PL(Photolum inescence)光谱蓝移了2nm
半峰全宽54.2nm
与提纯前一致;杂质影响载流子注入效率和迁移率
对器件光电性能有显著影响
纯化前后器件最大电流效率由1.5cd/A上升至2.5cd/A;器件Ⅱ色纯度有较大提高
CIE色坐标由器件Ⅰ(0.15
0.10)移至(0.15
0.06)。实验结果表明材料提纯是优化器件性能的有效手段之一。
Organic light-emitting diode (OLED) has attracted considerable attention due to their unique image quality and market potentials in display application.For the full-color display applications
it is essential to deliver the primary RGBemitters with high luminous efficiency
saturated color chromaticity
among which 9
10-Di (2-naphthyl) anthracene (ADN) is one of the stable and pure blue emitters.However
little attention has been paid to the influences of ADN’s purification on the electroluminescent (EL) performance.Synthesis and purification of ADNwere studied.The photoluminescence (PL) and electroluminescence (EL) spectra of ADNsynthesized and purified are investigated
respectively.The PLspectrum of ADNpurified exhibits an emitting peak at 434 nm with a full-width at half-maxium (FWHM) of 54.2 nm
while the rough material without purification is red shifted to 436 nm with the same FWHMof 54.2 nm.Organic light-emitting diodes (OLEDs) with a structure of indium tin oxide (ITO) (100 nm)/N
N’-biphenyl-N
N’-bis-(1-naphenyl)-[1
1’-biphenyl]-4
4’-diamine (NPB) (40 nm)/ADN (30 nm)/tris (8-quinolinolate) aluminum (Alq
3
) (20 nm)/LiF (1 nm)/Al (100 nm) are fabricated
where the rough and purified ADNare used as emitting layers in DiodeⅠand in DiodeⅡ
respectively
NPBis used as hole transport layer
Alq
3
as an electronic transport layer in this structure.Little diffe-rence of the maximum peak of ELspectra between two Diodes is found
which is 432 nm in DiodeⅠand 433 nm in DiodeⅡ
a current efficiency of 2.5 cd/Awith the Commission Internationale d’Eclairage (CIE) coordinates of (
x
=0.15
y
=0.06) is got in DiodeⅡ while only a current efficiency of 1.5 cd/Awith CIEof (
x
=0.15
y
=0.10) is found in DiodeⅠ.It is supposed that the purification of the ADNrough material has a positive effect on the ELcharacteristics of the OLED
meanwhile with fewer impacts on the PLspectra.Therefore the purification can be improved the performance of OLED greatly.
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