ZnO is a good ultraviolet material that can be used widely in manufacturing photoelectronic devices.It has great value of researching and using.Porous alumina is a good kind of membranous substrate.Under the guidance of energy band theory

we tried to roll them into one.The bang gap could be changed under the influence and interaction of the porous alumina.Anew energy level was created in the band gap by increasing the concentration of zinc interstitial and oxygen vacancies.So a new photoelectronic material was produced successfully.Porous alumina were formed at different voltages in different acid solutions at 0℃.Then ZnO thin film was deposited on the porous alumina substrates in vacuum by Pulsed Laser Deposition (PLD).Several mea-surement techniques

including Scanning Electronic Microscopy (SEM)

X-ray Diffraction (XRD) were used to analyze the morphology characteristics

crystalline phase and the composition of film.Its photoluminescence spectra were also measured.The experimental results showed that the morphology and photoluminescence of the film grown on porous alumina of different pore diameters differ greatly.The photoluminescence peaks of the ZnO film grown on porous alumina made from sulphuric acid aqueous solution are at 394 and 498 nm.The photoluminescence peaks of the ZnO film grown on porous alumina made from oxalic acid aqueous solution are at 417 and 466 nm.The photoluminescence peaks of the ZnO film grown on porous alumina made from phosphoric acid aqueous solution are at 415 nm and 495 nm.Because the film was fabricated in vacuum

it is rich in zinc and the photoluminescence spectrum changed when it was exposed in air for some time.Under the guidance of solid state energy band theory

we analyzed the photoluminescence spectra successfully.It can be discerned that we had produced a new photoelectronic material that has good properties.This gives us a new way in fabricating of ZnO .We deeply believe that this kind of material will be used widely in the near future.