ZHANG Xiao-song, LI Lan, WANG Da-jian. Crystal Property of ZnO:Zn Thin Film Improved by Post-deposition Heat Treatment[J]. Chinese Journal of Luminescence, 2006,27(2): 206-210
ZHANG Xiao-song, LI Lan, WANG Da-jian. Crystal Property of ZnO:Zn Thin Film Improved by Post-deposition Heat Treatment[J]. Chinese Journal of Luminescence, 2006,27(2): 206-210DOI:
play an important role.Field emission display(FED) is one of the most promising displays as full color FPD owing to its advantages such as wide view angle
wide temperature range for driving
high picture quality
low power consumption
high response speed
and without magnetic field and X-ray radiation.A lot of obstacles to the success of FED are lack of suitable phosphors
new electron sources for the field emission and encapsulation of FED device.Screens require new luminescent materials and fabricate technology as the one of important segments in FED.It is generally accepted that thin films phosphors have some advantages over bulk-type powder phosphors such as better thermal stability
reduced outgassing
better adhesion
and improved uniformity over the substrate surface.So the research of thin films phosphors becomes a hotspot in the research of FED screen.ZnO:Zn thin films have been grown on ITO substrates by electron beam evaporation method with sintered ZnO:Zn targets
and were annealed in 400℃ and 600℃ respectively.The construction
ingredient
surface morphology and luminescence properties of the ZnO:Zn thin films were performed using X-ray diffraction
(X-ray) photoelectron spectroscope
scanning electron microscope and photoluminescence spectra.The blue/green luminescent peak is detected for the ZnO:Zn thin films.Meanwhile
the singly ionized oxygen vacancies(V
O
) act as luminescent centers and responsible for the visible luminescence which was strongly affected by the annealing processes.It was found that crystallization is improved
and the disfigurement on crystal surface is repaired with the annealing temperature increase.At the same time
it can be concluded that the width of the main peak in photoluminescence spectra increases after the annealing process.The luminescent properties of ZnO:Zn thin films are enhanced in 400℃ and 600℃ annealing processes.So it can be concluded that post-deposition annealing is one of effective methods to increase luminescence properties of ZnO:Zn phosphor thin films.