互混型有机电致发光器件

庞宏启; 袁永波; 周云飞; 连加荣; 曹玲芳; 张洁; 刘彭义; 周翔

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互混型有机电致发光器件

研究论文 | 更新时间：2020-08-11

- 互混型有机电致发光器件
- Mixed Organic Thin Films for Organic Light-emitting Diodes
- 发光学报 2006年27卷第1期页码：91-94
- 作者机构：
  
  1. 中山大学, 光电材料与技术国家重点实验室
  2. 显示材料与技术广东省重点实验室, 广东, 广州, 510275
- 作者简介：
- 基金信息：
  
  广州市科技计划(2004J1-C0011)();教育部博士点基金(20040558008)资助项目()
- DOI：
  中图分类号： TN381.1;TN873.3
- 收稿日期：2004-08-28，
  
  修回日期：2004-12-24，
  
  纸质出版日期：2006-01-20
- 稿件说明：
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庞宏启, 袁永波, 周云飞, 连加荣, 曹玲芳, 张洁, 刘彭义, 周翔. 互混型有机电致发光器件[J]. 发光学报, 2006,27(1): 91-94

PANG Hong-qi, YUAN Yong-bo, ZHOU Yun-fei, LIAN Jia-rong, CAO Ling-fang, ZHANG Jie, LIU Peng-yi, ZHOU Xiang. Mixed Organic Thin Films for Organic Light-emitting Diodes[J]. Chinese Journal of Luminescence, 2006,27(1): 91-94
庞宏启, 袁永波, 周云飞, 连加荣, 曹玲芳, 张洁, 刘彭义, 周翔. 互混型有机电致发光器件[J]. 发光学报, 2006,27(1): 91-94 DOI：

PANG Hong-qi, YUAN Yong-bo, ZHOU Yun-fei, LIAN Jia-rong, CAO Ling-fang, ZHANG Jie, LIU Peng-yi, ZHOU Xiang. Mixed Organic Thin Films for Organic Light-emitting Diodes[J]. Chinese Journal of Luminescence, 2006,27(1): 91-94 DOI：

摘要

通过共蒸镀空穴传输材料TPD和电子传输材料Alq

在普通双层器件的异质结界面引入了均匀互混层

并研究了互混层的厚度变化对器件光电性能的影响。互混层的引入在一定程度上改善了普通双层器件的异质结界面由于高浓度载流子积聚导致的高电场和界面缺陷对器件主要性能(效率和寿命)的负面影响。我们发现一定厚度的互混层使器件的性能有所提高。

Abstract

The most common used structure of organic light-emitting diodes is the double layer heterojunction structure. By softening the high local electric field and partly eliminating the non-radiative recombination traps at the heterojunction interface

OLEDs with bipolar transport/emitting layer (BTEL) showed improved stability. However

the detail mechanisms of this structure are still undefined. The performance of OLEDs with uniformly mixed organic layer

which was formed by co-evaporating a hole transport material TPD

and an electron transport/emissive material Alq

was studied. We observed that the performances of OLEDs with uniformly mixed layer were strongly dependent on the thickness of the mixed-layer

and there exists an optimized thickness of mixed layer. The devices with 5 nm(thickness) mixed layer showed improved lifetime and current efficiency

while the devices with 10 nm or 20 nm(thickness) mixed layers demonstrated similar performance compared to the heterojunction devices. The single layer devices with 100 nm totally mixed layer exhibited a very poor efficiency and stability. A primary discussion on the results was given.

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references

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