生长温度对碳纳米管阴极场发射性能的影响

王莉莉; 孙卓; 陈婷

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生长温度对碳纳米管阴极场发射性能的影响

研究论文 | 更新时间：2020-08-11

- 生长温度对碳纳米管阴极场发射性能的影响
- Effects of CVD-Carbon Nanotubes Growth Temperatures on Field Emission Properties
- 发光学报 2006年27卷第1期页码：123-128
- 作者机构：
  
  华东师范大学, 纳米功能材料与器件应用研究中心, 上海纳晶科技有限公司上海,200062
- 作者简介：
- 基金信息：
  
  上海市科委纳米专项(0452NM048)();上海市科委科技攻关项目(035211036)();上海市技术创新体系建设项目(沪创新J-64)();教育部科学技术研究重点
- DOI：
  中图分类号： O462.4;TN873+.95
- 收稿日期：2004-10-11，
  
  修回日期：2005-04-20，
  
  纸质出版日期：2006-01-20
- 稿件说明：
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王莉莉, 孙卓, 陈婷. 生长温度对碳纳米管阴极场发射性能的影响[J]. 发光学报, 2006,27(1): 123-128

WANG Li-li, SUN Zhou, CHEN Ting. Effects of CVD-Carbon Nanotubes Growth Temperatures on Field Emission Properties[J]. Chinese Journal of Luminescence, 2006,27(1): 123-128
王莉莉, 孙卓, 陈婷. 生长温度对碳纳米管阴极场发射性能的影响[J]. 发光学报, 2006,27(1): 123-128 DOI：

WANG Li-li, SUN Zhou, CHEN Ting. Effects of CVD-Carbon Nanotubes Growth Temperatures on Field Emission Properties[J]. Chinese Journal of Luminescence, 2006,27(1): 123-128 DOI：

摘要

碳纳米管(Carbon Nanotubes

CNTs)场发射平面显示器(Field Emission Display

FED)与其他显示器比较显示了其独特优点

被认为是未来理想的平面显示器之一。碳纳米管阴极作为器件的核心部分

其性能的好坏直接影响显示器的性能。针对30~60英寸(76.2~152.4cm)大屏幕显示器所用的厚膜工艺

即采用丝网印刷法制备了碳纳米管阴极阵列

研究了化学气相沉积法在不同温度下生长的CNTs的场发射电流-电压特性

找到了适合FED用碳纳米管的最佳生长温度。结果表明生长温度越高(750℃)

CNTs场发射性能越好。并用荧光粉阳极测试这些CNTs的场发射发光显示效果

验证了上述结论。

Abstract

Carbon nanotubes field emission display (CNTs-FED) has been regarded as the most promising flat panel display due to its high definition

low power consumption

high brightness

fast response time

wide work temperature range and low cost. As the key material

the properties of CNTs will affect FED characters directly. CNTs with good field emission properties were needed for the FED. The CNTs were synthesized by chemical vapour deposition (CVD) in the temperature range of 500℃~750℃. The morphologies of CNTs depending on growth temperatures were characterized by scanning electron microscope. The as-grown CNTs were mixed with conductive pastes

then screen-printed on the glass substrate coated with a silver conducting layer to form a FED cathode. The dependence of FED properties on the CNTs growth temperatures was studied by using current-voltage (

) and luminescence image measurements. The SEM images shew that with the temperature increasing from 500℃ to 700℃

the average diameter of CNTs decreased. By the

and luminescence image measurements

it was found that the higher growth temperature

the better FED properties

i.e. lower turn-on emission field

higher emission current and more uniform emission.The field emission experiment of the CNTs cathodes indicated that there is an optimal temperature range (600~700℃) for CNTs growth and being used as field emission cathode. With good pro-perties

bright and stable anode image was observed in diode mode field emission. These results suggested that CVD grown CNTs could be used for cathode fabrication of large area field emission display.

关键词

Keywords

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