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中国科学院长春光学精密机械与物理研究所, 激发态物理重点实验室, 吉林, 长春, 130033
收稿日期:2005-06-13,
修回日期:2005-08-26,
纸质出版日期:2006-01-20
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俞天智, 苏文明, 李文连, 华瑞年, 李明涛, 李斌. Ce<sup>3+</sup>-冠醚配合物的紫外有机电致发光[J]. 发光学报, 2006,27(1): 134-136
YU Tian-zhi, SU Wen-ming, LI Wen-lian, HUA Rui-nian, LI Ming-tao, LI Bin. Ultraviolet Organic Electroluminescence from Ce<sup>3+</sup>-Crown Ether Complex[J]. Chinese Journal of Luminescence, 2006,27(1): 134-136
俞天智, 苏文明, 李文连, 华瑞年, 李明涛, 李斌. Ce<sup>3+</sup>-冠醚配合物的紫外有机电致发光[J]. 发光学报, 2006,27(1): 134-136 DOI:
YU Tian-zhi, SU Wen-ming, LI Wen-lian, HUA Rui-nian, LI Ming-tao, LI Bin. Ultraviolet Organic Electroluminescence from Ce<sup>3+</sup>-Crown Ether Complex[J]. Chinese Journal of Luminescence, 2006,27(1): 134-136 DOI:
采用5d-4f跃迁的稀土Ce
3+
-冠醚配合物(Ce-二环己基并-18-冠-6
Ce-DC18C6)作为发光掺杂剂
4
4'-二(9-咔唑基)联苯(CBP)为基质
设计制备了紫外发光器件:ITO/CuPc/Ce-DC18C6:CBP/Bu-PBD/LiF/Al
首次观测到峰位于376nm的Ce
3+
离子的紫外电致发光。通过对比器件的EL谱与Ce
3+
-冠醚配合物薄膜的PL谱发现
EL光谱中有部分来自Ce
3+
配合物中的Ce
3+
离子的。这种5d-4f电子跃迁的掺杂质量分数为3%时
该UV-发光器件的最大辐射功率为13μW/cm
2
。
Ultraviolet (UV) electroluminescence (EL) from organic light-emitting diode (OLED) with the emitter consisting of Ce
3+
-complex
Ce-dicyclohexano-18-crown-6(Ce-DC18C6)
as dopant
and a hole-transporting layer
4
4'-bis(9-carbazolyl) biphenyl (CBP) as the host have been investigated. The Ce
3+
-complex was prepared by reacting cerium chloride with dicyclohexano-18-crown-6 in a methanol. The EL devices with the structure of indium tin oxide (ITO)/copperphthalocyanine (CuPc)/Ce-DC18C6:CBP/2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1
3
4-oxadiazole(Bu-PBD)/LiF/Al were employed to study the UV EL emission properties of the Ce
3+
ion
and UV EL radiation peaked at about 376 nm from the Ce
3+
ion was firstly observed. Comparing the EL with photoluminescent (PL) excitation and emission spectra
it is speculated that the UV EL emission was proved to be resulted from the 5d-4f transition of the Ce
3+
ion in the Ce
3+
-complex. And we have also found that the UV radiation with shorter wavelength is more valuable for using as excitation source of organic or inorganic phosphors
which will be expected to become solid state illumination with panel feature. A maximum radiance power of our UV-diodes is 13 μW/cm
2
for 3%(mass fraction) Ce
3+
-complex doped CBP device.
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