Ⅱ-Ⅵ族化合物薄膜电致发光

钟国柱

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Ⅱ-Ⅵ族化合物薄膜电致发光

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- Ⅱ-Ⅵ族化合物薄膜电致发光
- Thin Film Electroluminescence in Ⅱ-Ⅵ Compounds
- 发光学报 2006年27卷第1期页码：6-17
- 作者机构：
  
  中国科学院, 长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
  
  国家自然科学基金();国家“863”计划资助项目()
- DOI：
  中图分类号： TN383.1;O482.31
- 收稿日期：2004-05-20，
  
  修回日期：2004-10-24，
  
  纸质出版日期：2006-01-20
- 稿件说明：
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钟国柱. Ⅱ-Ⅵ族化合物薄膜电致发光[J]. 发光学报, 2006,27(1): 6-17

ZHONG Guo-zhu. Thin Film Electroluminescence in Ⅱ-Ⅵ Compounds[J]. Chinese Journal of Luminescence, 2006,27(1): 6-17
钟国柱. Ⅱ-Ⅵ族化合物薄膜电致发光[J]. 发光学报, 2006,27(1): 6-17 DOI：

ZHONG Guo-zhu. Thin Film Electroluminescence in Ⅱ-Ⅵ Compounds[J]. Chinese Journal of Luminescence, 2006,27(1): 6-17 DOI：

摘要

电致发光薄膜是平板显示器的重要材料之一

我们从研究ZnS:Mn

Cu直流电致发光薄膜的大面积稳定发光开始

首次将稀土离子引进直流电致发光薄膜

实现了各色的直流电致发光

并研究其激发机理、过热电子的能量分布、稀土离子的碰撞截面和稀土离子发光中心在晶格中的位置等。在国内首先研制成功ZnS:Mn交流电致发光薄膜计算机终端显示器

并扩大面积到640×480像素(对角线10英寸)。为了实现彩色化显示

研制出稀土离子掺杂的各色交流电致发光薄膜。研究不同稀土离子在薄膜中的浓度猝灭

以便提高薄膜的发光亮度。在致力于实现彩色的过程中

首要的任务是提高蓝色电致发光薄膜的亮度和探索新的蓝色电致发光薄膜材料:从ZnS:TmF

到CaS:TmF

发光亮度有了很大的提高;使SrS:Ce薄膜蓝色电致发光的亮度超过1000cd/m

;同时探索纳米Si和非晶Si/SiO

超晶格结构的蓝色电致发光。成功地实现了ZnS:Mn/SrS:Ce白色电致发光和SrS:HoF

三基色线谱发射的白色电致发光

发光亮度也超过1000cd/m

。

Abstract

Thin film electroluminescence

TFEL

is one of the most important material of flat panel display. Researching work on TFEL is sustained until now. We have started stable EL from ZnS:Mn

Cu thin film

at first

and doped with rare earth ions into thin film

realized various color DCEL and studied excitation mechanism

energy distribution of hot electrons

impact section of rare earth ion and the position of rare earth ion in crystal lattice. At first

in our country we have worked out computer terminal display device of TFEL and made it in large area (640×480 lines). In order to realize color TFEL display

we have fabricated different color TFEL doped with different rare earth ions

studied concentration quenching of rare earth ions in TFEL and their mechanism

guided to fabricate material and increase EL brightness. In process of realizing color display of TFEL

the first task is increasing brightness of blue TFEL and searching new blue TFEL material. We improved AnS:TmF

to CaS:TmF

which brightness was greatly increased

fabricated SrS:Ce blue TFEL with high brightness over 1000 cd/m

found nano-meter Si and non-crystal Si/SiO

superlattice structure of blue EL

obtained white EL in ZnS:Mn/SrS:Ce and SrS:Ho

with three basic color line spectrum emission with high brightness over 1000cd/m

关键词

Keywords

references

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