ZnS中电子陷阱能级对光生电子弛豫过程的影响

董国义; 窦军红; 韦志仁; 葛世艳; 郑一博; 林琳; 田少华

doi:null

您当前的位置：

首页 >

文章列表页 >

ZnS中电子陷阱能级对光生电子弛豫过程的影响

研究论文 | 更新时间：2020-08-11

- ZnS中电子陷阱能级对光生电子弛豫过程的影响
- Effect of Electron Traps in ZnS on the Decay Process of Photoelectrons
- 发光学报 2006年27卷第1期页码：31-35
- 作者机构：
  
  河北大学, 物理科学与技术学院, 河北, 保定, 071002
- 作者简介：
- 基金信息：
  
  河北省自然科学基金(E2004000117,F2004000130)();河北省科技攻关(02213506D)();河北省教育厅资助项目()
- DOI：
  中图分类号： O472.3;O482.31
- 收稿日期：2004-08-20，
  
  修回日期：2004-11-24，
  
  纸质出版日期：2006-01-20
- 稿件说明：
移动端阅览
董国义, 窦军红, 韦志仁, 葛世艳, 郑一博, 林琳, 田少华. ZnS中电子陷阱能级对光生电子弛豫过程的影响[J]. 发光学报, 2006,27(1): 31-35

DONG Guo-yi, DOU Jun-hong, WEI Zhi-ren, GE Shi-yan, ZHENG Yi-bo, LIN lin, TIAN Shao-hua. Effect of Electron Traps in ZnS on the Decay Process of Photoelectrons[J]. Chinese Journal of Luminescence, 2006,27(1): 31-35
董国义, 窦军红, 韦志仁, 葛世艳, 郑一博, 林琳, 田少华. ZnS中电子陷阱能级对光生电子弛豫过程的影响[J]. 发光学报, 2006,27(1): 31-35 DOI：

DONG Guo-yi, DOU Jun-hong, WEI Zhi-ren, GE Shi-yan, ZHENG Yi-bo, LIN lin, TIAN Shao-hua. Effect of Electron Traps in ZnS on the Decay Process of Photoelectrons[J]. Chinese Journal of Luminescence, 2006,27(1): 31-35 DOI：

摘要

采用微波吸收法

测量了在不同助熔剂条件及不同气氛下烧制的ZnS材料受到超短激光脉冲激发后的光电子衰减过程

并且测量了材料的热释光曲线。样品A采用过量的SrCl作为助熔剂

在1150℃下灼烧制备而成;其热释光曲线显示材料中有浅电子陷阱

电子陷阱密度小

光生电子衰减过程为双指数衰减过程

快过程寿命为45ns

慢过程寿命为312ns。样品B中加入了少量的NaCl作为助熔剂;热释光曲线显示有浅电子陷阱和深电子陷阱

且都有较高的密度

其光电子寿命为1615ns。在NH

Br气氛中烧制样品C

热释光谱显示只有浅电子陷阱形成

光电子寿命为1413ns。结果表明材料的光电子寿命和浅电子陷阱密切相关

浅电子陷阱密度越大

光生电子寿命越长

深电子陷阱对光生电子瞬态过程影响很小。

Abstract

There are very few direct measurement techniques that can be used to establish the movement of carriers in powders and polycrystals.The microwave absorption dielectric spectrum detection technique is suitable for investigating dynamic processes undergone by photocarriers of semiconducting nanomaterials

powder luminescent materials

micropowder

nanocrystal materials and multicrystal membrane materials.Investigation of the kinetic decay process for free photoelectrons and shallow trapped electrons is helpful in achieving and understanding of the kinetic mechanism of luminescence and the energy level structure for luminescent material or other semiconducting crystal materials;also

it can provide a scientific basis for the improvement of the luminescence efficiency of semiconducting materials. The decay process of photoelectrons of ZnS powder materials after excitation with short pulse laser has been measured by microwave absorption method. The materials were prepared under different flux and protective gas. The thermoluminescence spectra of the materials has also been investigated. Sample A was sintered at 1 150℃ with excessive SrCl as flux. The thermoluminescence spectra showed that there were shallow-electron traps and the density of that was low. The decay processes of photoelectrons included two exponential decay processes and the lifetime of the fast process and the slow process were 45 ns and 312 ns respectively. Sample C was prepared with a small quantity of NaCl as flux. The thermoluminescence spectra of it showed that there are high density of shallow-electron traps and deep-electron traps in the materials. Its lifetime is 1 615 ns. The lifetime of Sample B which was sintered under NH

Br protective gas is 1 413 ns and only shallow-electron traps was formed. It was proved that the lifetime of photoelectrons has close relation with the density of shallow-electron traps. The higher the density was

the longer the lifetime. But deep-electron traps have little effect on the instant process of photoelectrons.

关键词

Keywords

references

Chen M C.Photoconductivity lifetime measurements on HgCdTe using a contactless microwave technique[J].J.Appl.Phys.,1968,64(2):945-947.

Deri R I,Spoonhower J P.Microwave photoconductivity lifetime measurement:experimental limitations[J].Rev.Sci.Instrum.,1984,55(8):1343-1347.

Damaskinos S,Dixon A E,Roberts G D,et al.Spatially resolved lifetime measurements in neutron-transmutation-doped polycrystalline silicon[J].J.Appl.Phys.,1986,60(5):1681-1688.

Buczkowski A,Radzimski Z J,Rozgonyi G A,et al.Bulk and surface components of recombination lifetime based on a two-laser microwave reflection technique[J].J.Appl.Phys.,1991,69(9):13-17.

Fu G S,Yang S P,Li X W,et al.The research advances in sliver halide photo-action kinetics[J].Chinese Photographic Science and Photo-chemistry (感光科学与光化学),2002,20(1):60-68 (in Chinese).

Yang S P,Li X W,Han L,et al.Characteristics of photoelectron decay of silver halide microcrystal illuminated by a short pulse laser[J].Chin.Phys.Lett.(中国物理快报),2002,19(3):429-431 (in Chinese).

Dong G Y,Li X W,Wei Z R,et al.Investigation of influences of concentration of Mn and Cu dopants on the decay process of photogenerated charge carriers in the ZnS:Mn,Cu luminescence materials[J].Acta Phys.Sin.(物理学报),2003,52(3):745-750 (in Chinese).

Dong Guoyi,Fu Guangshen,Wei Zhiren,et al.Measurement of decay process of photoelectrons from ZnO by microwave absorption method[J].Chin.J.Lumin.(发光学报),2003,24(4):339-342 (in Chinese).

Romeo N,Cozzi R,Tedeschi A,et al.High quality ZnS:Mn thin films grown by quasi-rheotaxy for electroluminescent devices[J].Thin.Solid.Films,1999,348:49-55.

Zhao H,He D W,Wang Y S,et al.Analytical band simulation of electric transport in ZnS thin film electroluminescent devices[J].Acta Phys.Sin.(物理学报),2000,49 (9):1867-1872 (in Chinese).

Zhao L J,Zhang G Z,Zhao L J,et al.Electroluminescent mechanism in SrS:HoF3 thin film[J].Acta Phys.Sin.(物理学报),1999,48(7):1381-1388 (in Chinese).

Lou Z D,Georgobiani A N,Xu Z,et al.Point defects in TFEL phosphor and their effect[J].Chin.Sci.Bull.(科学通报),1998,43 (11):1210-1215 (in Chinese).

Dimitrova V,Tate J.Synthesis and characterization of some ZnS-based thin film phosphors for electroluminescent device applications[J].Thin Solid Films,2000,365:134-138.

Mueller G O,Mueller Mack R,Alinsage E,et al.Microcavity effects in thin-film electroluminescence[J].J.Lumin.,1997,72-74:1002-1004.

Chikara Onodera,Tsunemasa Taguchi.Effect of carrier localization on optical gain formation in CdxZn1-xS/ZnS quantum wells[J].Jpn.J.Appl.Phys.,2000,39(4):1782-1785.

Heine J R,Bawendi M G,Jensen K F,et al.Synthesis of CdSe quantum dot ZnS matrix thin films via electrospray organometallic chemical vapor deposition[J].J.Cryst.Growth,1998,195(1):564-568.

Murase N,Kanematsu Y,Kawasaki Y,et al.Preparation and fluorescence properties of Eu3+ doped strontium chloroa-patite nanocrystals[J].J.Lumin.,2000,87(9):488-490.

Konishi M,Senna M,Isobe T.Enhancement of photoluminescence of ZnS:Mn nanocrystals by hybridizing with poly-merized acrylic acid[J].J.Lumin.,2000,93(1):1-8.

Guo Changxin,Li Bilin.Luminescent decay of nanocrystal ZnS:Mn phosphor[J].Chin.J.Lumin.(发光学报),2001,22(3):223-226 (in Chinese).

Lan Chun,Hong Kunquan,Wang Wenzhong.Synthesis of ZnS nanorods by annealing precursor ZnS nanoparticles in NaCl flux[J].Sol.State Commun.,2003,125:455-458.

Müssig Th.Principles of microwave absorption technique applied to AgX microcrystals[J].J.Imaging Sci.Tech.,1997,41(2):118-127.

Müssig Th.Hegenbart G.Microwave absorption investigation of AgBr1-xIx crystals[J].J.Imaging Sci.Tech.,1994,38(3):526-532.

Yang Shaopeng,Li Xiaowei,Han Li,et al.Characteristic of photoelectron decay of sliver halide microcrystal illuminated by a short pulse laser[J].Chin.Phys.Lett.(中国物理快报),2002,19(3):429-432 (in Chinese).

浏览量

147

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

长余辉荧光粉Ba₅SiO₄Cl₆∶Eu²⁺, Ln³⁺的制备与发光性能

热释光动力学解析及其在长余辉材料研究中的应用

(Zn_1-x,Mg_x)₂GeO₄:Mn²⁺的荧光以及长余辉发光性能

乙醇对纳米多孔氧化铝薄膜热释光的影响

发光颜色可调的硅酸盐长余辉发光材料 Ba₄(Si₃O₈)₂∶Eu²⁺,Ce³⁺,Dy³⁺