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1. 中国科学院, 激发态物理重点实验室,吉林 长春,130033
2. 吉林大学, 物理学院, 吉林, 长春, 130021
收稿日期:2004-08-22,
修回日期:2004-12-21,
纸质出版日期:2005-05-20
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王岩松, 徐世峰, 范翊, 罗劲松, 王文全, 安立楠, 张立功. 聚合物前驱体制备具有竹节结构的Si-B-C-N纳米材料及其发光[J]. 发光学报, 2005,26(3): 391-394
WANG Yan-song, XU Shi-feng, FAN Yi, LUO Jin-song, WANG Wen-quan, AN Li-nan, ZHANG Li-gong. Synthesize and Optical Properties of Si-B-C-N Bamboo Nanomaterial from Polymer[J]. Chinese Journal of Luminescence, 2005,26(3): 391-394
王岩松, 徐世峰, 范翊, 罗劲松, 王文全, 安立楠, 张立功. 聚合物前驱体制备具有竹节结构的Si-B-C-N纳米材料及其发光[J]. 发光学报, 2005,26(3): 391-394 DOI:
WANG Yan-song, XU Shi-feng, FAN Yi, LUO Jin-song, WANG Wen-quan, AN Li-nan, ZHANG Li-gong. Synthesize and Optical Properties of Si-B-C-N Bamboo Nanomaterial from Polymer[J]. Chinese Journal of Luminescence, 2005,26(3): 391-394 DOI:
采用热裂解聚合物前驱体法制备出了具有竹节结构的Si-B-C-N纳米材料。扫描电子显微镜(SEM)和透射电子显微镜(TEM)结果表明样品具有特殊的竹节状(叠杯状)形貌
电子散射能谱(EDX)证实了样品组分为Si、B、C、N。通过微区喇曼光谱仪研究了样品在488nm激光激发下从84~290K的变温发射特性
在490~800nm观察到位于580
620nm附近两个较强发射峰和740nm附近一个弱的发射峰。变温实验说明相应发射峰与材料禁带中形成的杂质能级有关。
Si-B-C-N materials derived from polymer precursors recently received a high attention due to their outstanding high temperature stability. It has been reported that the precursor-derived Si-B-C-N materials do not degrade at temperatures up to 2000℃
even in nitrogen-free environments. In addition
they possess superior mechanical properties such as excellent creep and oxidation resistance. Therefore these materials are promising for components which were serve at temperatures above 1000℃
such as turbine parts.Much studies have focused on amorphous Si-B-C-N materials
while especially studies on crystal Si-B-C-N nano-materials are still under the way.We focus on the optical properties of Si-B-C-N nanomaterials derived from boron-modified polysilazanes precursors. Scanning electronic microscopy (SEM) and high transmission electronic microscopy (TEM) observation showed a special structure just like bamboo. Photoluminescense (PL) spectrum was measured under 488 nm laser excitation from 89 K to 290 K. Three emission peaks were observed at about 580
620 and 740 nm
respectively. It is believed that the emission peaks were concerned with impurity level in the bandgap.
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