Top-emitting organic light-emitting devices (OLEDs) offer a feasible fabrication of OLED displays on opaque substrates

such as Si wafers and active-matrix backplanes with complicated pixel circuits of thin-film transistors and integrate circuit. In top-emitting OLEDs

high reflectivity of the bottom anode is essential for achieving high luminance efficiency. Among various metals

Ag has the highest reflectivity for visible light. However

it is generally not considered as an ideal hole-injecting anode for OLEDs due to its rather low work function

not matching well the ionization potentials of organic materials commonly used in OLEDs. In this letter

we report a top-emitting organic light-emitting device on silicon substrate with high luminance and current efficiency utilizing Ag as electrodes and ultrathin quinacridone(QAD) as emitting layer. Surface-modified Ag and thin Ag films act as anode. The luminance reaches 13700cd/m

2

at 10V and the maximum current efficiency of the device using such electrode is 4.3cd/A at 7V

which is about twice times than those devices without QAD. The improved performance is owing to the characteristics of quinacridone

which accepts excitation energy from tris(8-hydroxyquinoline) aluminium via Fster mechanism.