Anodic alumina films were prepared by anodization of ~400nm thick aluminum films evaporated on silicon substrate using electron beam in 15wt% H

2

SO

4

at 250C under a constant DC voltage of 40V. FTIR

PL and PLE measurements were performed on those resulting Si based anodic alumina films based upon which possible origin of the PL was discussed. All three PL peaks were analyzed to be related to oxygen deficient defects emission similar to that in sapphire. Among them two sharp peaks centered at 312nm

367nm were basically attributed to F

+

and F center emission respectively while the origin for third broad 449nm peak is still unknown and further detailed work is required.