Ⅱ-Ⅵ semiconductor heterostructures have been extensively studied in the past several years due to their potential applications in blue and blue-green optoelectronic devices. The use of these structures in light emission diode and laser diode requires the applications of an electric field to provide carriers for recombination-based optical processes. But the existence of electric field also influences the optical properties of these structures. In this paper

the investigation of the effect of electric field on the electro-modulated reflectance (ER)spectra energy and intensity of ZnCdSe-ZnSe superlattices was described. The variation of ER spectra under different bias at room temperature is studied for the first time. In the range of the weak electric field

the intensity of the ER spectra increase with increasing the electric field

but the lineshape is almost not affected. In the range of strong electric field

the lineshape of the ER spectra vary with increasing the electric field

and the transition energy shows a red shift. The forbidden transition emerges under certain field intensity

and its intensity increases quickly with increasing the field intensity

these effects are attributed to the quantum confined stark effect (QCSE). The ER spectra of compound superlattice with different potential barrier heights under different bias voltages indicate that the excitons are more easily affected than the superlattice with lower confining energy. The results are useful for the design of ZnSe/based optoelectronic devices.