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1. 中国科学院激发态物理开放研究实验室 长春,130021
2. 佐治亚大学物理和天文系, 阿森斯佐治亚,30602
3. 北京师范大学系统科学系, 北京100875
收稿日期:1999-12-03,
修回日期:2000-06-19,
纸质出版日期:2000-08-30
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黄世华, 鄂书林, 王有贵, 张家骅, 吴兴坤, 严懋勋. CaBa-铝酸盐玻璃中Cr<sup>4+</sup>谱线宽度随温度的变化[J]. 发光学报, 2000,21(3): 185-189
HUANG Shi-hua, E Shu-lin, WANG You-gui, ZHANG Jia-hua, WU Xing-kun, YEN W. M.. Temperature Dependence of the Emission Band Width of Cr<sup>4+</sup> in CaBa Aluminate Glass[J]. Chinese Journal of Luminescence, 2000,21(3): 185-189
黄世华, 鄂书林, 王有贵, 张家骅, 吴兴坤, 严懋勋. CaBa-铝酸盐玻璃中Cr<sup>4+</sup>谱线宽度随温度的变化[J]. 发光学报, 2000,21(3): 185-189 DOI:
HUANG Shi-hua, E Shu-lin, WANG You-gui, ZHANG Jia-hua, WU Xing-kun, YEN W. M.. Temperature Dependence of the Emission Band Width of Cr<sup>4+</sup> in CaBa Aluminate Glass[J]. Chinese Journal of Luminescence, 2000,21(3): 185-189 DOI:
测量了15~300K温度范围内57.5%Al
1.5
O-35%CaO-7.5%BaO玻璃中四价铬的发射光谱.这种材料中铬离子的能级处于Tanabe-Sugano图上弱场范围中
最低的激发态是
3
T
2
发射谱是一个宽带.按照单频近似理论拟合低温下的光谱
得到
3
T
2
能级的零声子线位置
E
zp
=8400cm
-1
声子能量tω=320cm
-1
黄昆因子
S
=358.尽管单频近似能够较好地描述低温下的线形
发射光谱宽度随温度的变化却与单频近似理论的结果不符.讨论了这种差别的原因
认为可能的解释是与激发态耦合的声子能量大于与基态耦合的声子能量.
The emission spectra of Cr
4+
in 57.5%AlO
1.5
-35%CaO-7.5%BaO glass were measured at different temperature from 15K to 300K. The energy levels of Cr
4+
in this host fall into the weak field regime on the Tanabe Sugano diagram
the lowest excited state is
3
T
2
and the emission spectrum is a broad band (Fig.2). The spectrum at 15K (Fig. 1) can be approximated by a Pekarian
[5]
g
(
E
zp
-
p
tω)=
e
-S
S
P
/p!
By fitting the spectrum with this function we have got
E
zp
=8400±13cm
-1
ω=320±5cm
-1
S= 3.58±0.08. Strictly speaking
the spectrum should be the convolution of the phonon sideband and an inhomogeneous lineshape
which is usually expressed by a Gaussian. By calculating the convolution and comparing with Fig.1
we estimated that the inhomogeneous line width is within 300~400cm
-1
(FWHM). The emission band widths obtained from Fig.2 are shown in Fig.3 as solid cycles. According to the single frequency approximation
its temperature dependence would be
[5]
D
=
D
0
[1+
e
-tω/
kT
/1-
e
-tω/
kT
]
1/2
=
D
0
coth
1/2
[tω/
kT
]
where
D
0
is the band width at 0K. With the parameters obtained above
D
should be as shown by the solid line in Fig.3 (labeled by ωV/ωU=1). Evidently
it does not agree with the experimental result. The temperature dependence of the width of the phonon sideband originates from the thermal excitation of higher vibronic states. Transition from these states covers larger energy range. If the high vibrational states coupled to the excited electronic state are less populated
the temperature dependence of the bandshape would be weaker. This will happen if the phonon coupled to the excited electronic state possesses energy larger than that coupled to the ground state. Thus it makes us apply the model where the ground state and the excited state couple unequal frequency phonons
[6]
. Keeping
S
E
zp
and ηω
U
obtained from the single frequency approximation fitting and taking ω
V
/ω
U
as a new parameter
we calculated the temperature dependence of the emission bandwidths. The calculated results are shown in Fig.3
ω
V
/ω
U
=1.15 results in the best fitting.
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