SONG Xiaowei, LI Mei, GAO Xin, LI Jun. PHOTOLUMINESCENCE OF GaAlAs/GaAs QUANTUM WELLS STRUCTURE[J]. Chinese Journal of Luminescence, 1999,20(3): 274-277
SONG Xiaowei, LI Mei, GAO Xin, LI Jun. PHOTOLUMINESCENCE OF GaAlAs/GaAs QUANTUM WELLS STRUCTURE[J]. Chinese Journal of Luminescence, 1999,20(3): 274-277DOI:
In this paper we will report GaAlAs/GaAs gradient refraction index separate confinement quantum wells structures by MOCVD growth and its optical properties.The samlpe were characterized by high-resolution photoluminescence measurements.For 8nm single quantum well
the photo-luminescence spectra at 10K were measured which have a linewidth(FWHM)of 6.2nm and large intensity
indicating an abrupt GaAlAs/GaAs interface.The shift of X(e-hh)peak position versus the excitation level are also observed.The results of PL measurement show that sample quality has met the requirment of design and proven to be satisfactory.