The temperature dependence of photoluminescence(PL)peak in porous silicon is investigated.It was found that the PL peak shift is only dependent on measurement temperature.As increasing temperature

the peaks of PL from the specimens whose peak wavelengths are longer shift to higher energy

the peaks of PL from the specimens whose peak wavelengths are shorter shift to lower energy

and the peaks of PL from the specimens whose wavelengths are located to 740nm are independent of temperature.The PL origin is discussed in terms of a new model.