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1. 北京大学物理系介观物理重点实验室 北京,100871
2. School of Physics, University of Melbourne, Packville,. Vic,Australia,3052
收稿日期:1998-05-30,
纸质出版日期:1999-02-28
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童玉珍, Liu M S, Bursill L A, 李景, 张国义, 甘子钊 . AlGaN薄膜的微区Raman散射光谱研究[J]. 发光学报, 1999,20(1): 32-36
Tong Yuzhen, Liu M S, Bursill L A, Li Jing, Zhang Guoyi, Gan Zizhao. MICRO RAMAN SPECTRA OF AlGaN FILMS[J]. Chinese Journal of Luminescence, 1999,20(1): 32-36
利用微区Raman散射技术
对低压MOCVD生长的不同Al组分的Al
x
Ga
1-x
N薄膜(x=0
0.07
0.15)进行了背散射Z(X
X)Z-几何配制下的测量。A1(LO)模式的声子频移随Al组分的变化关系为:ω(Al
x
Ga
1-x
N)=(1+0.220x)ω
(GaN)
.观察到了A1(LO)模式由于空间相关效应引起的展宽。E2模式随Al组分的的增大产生的移动很微小
但趋于展宽。这被认为是E2模式的声子频移随Al组分的增加而增大与其受到的张应力导致的声子频移随Al组分的增加而减小共同作用的结果。在多种配置下
观察到了Al
0.07
Ga
0.93
N薄膜的A1(TO)模式、A1(LO)模式、E1(TO)模式和E2模式。验证了Al
x
Ga
1-x
N薄膜的Raman选择定则。表明Al
x
Ga
1-x
N薄膜具有单模行为。
Al
x
Ga
1-x
N films with x=0
0.07
0.15 grown by LP MOCVD were measured by micro-Raman technique under
Z
(
X
X
)Z-configuration. Dependence of Raman shift of A1(LO) mode on Al molar fraction was given by ω(Al
x
Ga
1-x
N)=(1+0.220x) ω
(GaN)
. Broadening of A1(LO) were demonstrated from spatial correlation effect. E2 modes had little shift except small broadening. It was suggested shift increasing of E2 mode with Al molar fraction increasing and shift decreasing due to strain from underlying GaN co effect it. Under various configurations
A1(TO)
A1(LO)
E1(TO) and E2 modes were observed
and they followed Raman select rules. Single mode behavior of phonon was supported.
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