In0.49Ga0.51P中缺陷的俘获行为

王海龙; 封松林

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In_0.49Ga_0.51P中缺陷的俘获行为

论文 | 更新时间：2020-08-11

- In_0.49Ga_0.51P中缺陷的俘获行为
- NATIVE DEFECTS IN UNDOPED In_0.49Ga_0.51P GROWN BY MOCVD
- 发光学报 1999年20卷第1期页码：17-21
- 作者机构：
  
  中国科学院半导体研究所超晶格国家重点实验室, 北京 1000832. 曲阜师范大学物理系, 曲阜,273165
- 作者简介：
- 基金信息：
- DOI：
  中图分类号：
- 收稿日期：1998-05-30，
  
  纸质出版日期：1999-02-28
- 稿件说明：
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王海龙, 封松林. In0.49Ga0.51P中缺陷的俘获行为[J]. 发光学报, 1999,20(1): 17-21

Wang Hailong, Feng Songlin. NATIVE DEFECTS IN UNDOPED In0.49Ga0.51P GROWN BY MOCVD[J]. Chinese Journal of Luminescence, 1999,20(1): 17-21
王海龙, 封松林. In0.49Ga0.51P中缺陷的俘获行为[J]. 发光学报, 1999,20(1): 17-21 DOI：

Wang Hailong, Feng Songlin. NATIVE DEFECTS IN UNDOPED In0.49Ga0.51P GROWN BY MOCVD[J]. Chinese Journal of Luminescence, 1999,20(1): 17-21 DOI：

摘要

利用深能级瞬态谱(DLTS)和瞬态光电阻率谱(TPRS)研究了利用金属有机物化学汽相沉淀(MOCVD)生长的未有意掺杂的In

0.49

0.51

P中缺陷对载流子的俘获过程和发射过程。利用DLTS测量观测到了一个激活能为0.37eV的缺陷

该缺陷的俘获势垒值介于180meV到240meV之间。该缺陷的俘获势垒值的大的分布被解释为缺陷周围原子重组的微观波动。在研究中发现研究这些缺陷的俘获过程比发射过程更有效

俘获势垒为0.06eV和0.40eV的两个缺陷在俘获过程中被观测到

而在发射过程中并没有观测到

Abstract

We have investigated the emission and capture process of native defects in undoped In

0.49

0.51

P grown by MOCVD using DLTS technique and transient photo-resistivity spectroscopy (TPRS) technique. A common defect with an activation energy of about 0.37eV was observed with DLTS technique. It's found that the capture barriers of the defect distributed over 60meV from 180meV to 240meV by TPRS measurements. The distribution can be interpreted as the microscopic fluctuation of atomic arrangements around the defect. The investigation of capture process seems more powerful then emission process in these materials

because of two defects with capture barrier energy 0.06 and 0.40eV

that can not be detected with DLTS technique

were also observed with TPRS measurements.

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