CdS-ZnS strained layer multiple quantum wells have been fabricated on the(100)GaAs substrate by LP-MOCVD. The satellite peaks of X-ray diffraction indicate the existence of a good crystallinity MQWs. PL spectrum at 77 K shows the strong luminescence peaks at 365 nm and 385 nm respectively
which shift to high energy side about 0.8 eV compared to the CdS single crystal. It indicates the existence of the quantum confinement effect and large band shift caused by large strain.