Light-emitting diodes(LEDs)having a ZnCdSe-ZnSe quantum well were grown by metal organic chemical vapour deposition(MOCVD)at a growth temperature of 430℃. Tert-butylamine(TBA)was used as a p-type dopant. ZnSe heterostructure diodes showed better voltage-current characteristics. The existence of ZnSe pn junction was showed by the electron beam induced current(EBIC)of a scanning electron microiscope. At 77K
blue-green light emission was observed at a wavelength of 465 nm at forward current.