Undoped bulk InP was grown along <100> direction by the liquid-encapsulated vertical Bridgman (LE-VB) technique. Photoluminescence spectra of as-grown InP at 4.2K were consisted of three parts. A peak exhibited near band gap energy is attributed to the recombination of bound excitons. At the low energy side of bound exciton (BE)

a series of peaks with same energy interval are due to the recombination of donor-acceptor (DA) pairs with their phonon replicas

which are associated with Zn acceptor. A deep level recombination is characterized by a series of resolvable peak at its higher energy side

which can be associated with emission of native defects and their phonon replicas. The comparison results of the 4.2K PL spectra showed that in LE-VB crystsl the lattice relaxations of the DA emission are smaller and the PL intensities of the DL are stronger than those in the seed crystal grown by liquid-encapsulated czochralski (LEC)technique. At room temperature

only a band-to-band recombination was observable in both as-grown LE-VB crystal and LEC seed crystal. The PL mapping results showed that PL intensities of the band-to-band recombination in LE-VB crystal are stronger than those in LEC crystal. By combining the Huber etch pit density analysis

it is considered that the stronger PL intensities of the band-to-band recombination in LE-VB crystal can be due to the lower densities of the native defects responsible for the DL recombination and of the dislocations responsible for the Huber etch pit. The densities of the native defects and dislocations in the crystal can be reduced by LE-VB technique.