InAs epilayers and InAs/GaSb heterostructure were grown by atmospheric pressure metalorganic chemical vapor deposition(MOCVD) on GaSb and GaAs substrates with trimethylindium

trimethylgallium

trimethylantimony and arsine as precursors at lower Ⅴ/Ⅲ ratio(1.5～4). The growth efficiency for Ⅲ group precursors equal to 3×10

3

μm/mol. Experimental results indicated that the growth of InAs was controlled by diffusion for growth temperature t

g

in 500℃～600℃ range. The undoped InAs epilayer is n type and its mobility at room temperature is 2000cm

2

/V.s. The PL spectra of InAs/GaSb heterostructure at 12K includes a wider peak at 375meV corresponding to emission processes involving with impurity and defects states and a weak band-edge peak at 417meV.