Wang Jifeng, Huang Ximin, Zhang Zhishun, Xu Xurong. STUDY ON ELECTRICAL PROPERTIES OF ZnSe:Al[J]. Chinese Journal of Luminescence, 1995,16(2): 149-152DOI:
Electrical properties of ZnSe:Al have been measured by the method of Van de Pauw from 77K to 300K. Defects in ZnSe:Al have been discussed and compensatingratio has been calculated.Optical phonon seatting to carrier becomes week and ionized impurity seatting becomes strong with the increase of doping temperature.Hall parameters
carrier concentration and Al ionized energy in ZnSe:Al were also calculated in this paper.