2～4μm波长的InAsPSb异质结激光管材料的液相外延

王永珍; 金长春; 吕贵进

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2～4μm波长的InAsPSb异质结激光管材料的液相外延

电致发光 | 更新时间：2020-08-11

- 2～4μm波长的InAsPSb异质结激光管材料的液相外延
- LIQUID PHASE EPITAXIAL GROWTH OF InASPSb/InAS HETEROJUNCTION FOR LASER DIODE IN THE 2-4μmWAVELENGTH REGION
- 发光学报 1994年15卷第4期页码：327-331
- 作者机构：
  
  中国科学院长春物理研究所长春,130021
- 作者简介：
- 基金信息：
- DOI：
  中图分类号：
- 收稿日期：1994-03-29，
  
  纸质出版日期：1994-11-30
- 稿件说明：
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王永珍, 金长春, 吕贵进. 2～4μm波长的InAsPSb异质结激光管材料的液相外延[J]. 发光学报, 1994,15(4): 327-331

Wang Yongzhen, Jin Changchun, Lü Guijin. LIQUID PHASE EPITAXIAL GROWTH OF InASPSb/InAS HETEROJUNCTION FOR LASER DIODE IN THE 2-4μmWAVELENGTH REGION[J]. Chinese Journal of Luminescence, 1994,15(4): 327-331
王永珍, 金长春, 吕贵进. 2～4μm波长的InAsPSb异质结激光管材料的液相外延[J]. 发光学报, 1994,15(4): 327-331 DOI：

Wang Yongzhen, Jin Changchun, Lü Guijin. LIQUID PHASE EPITAXIAL GROWTH OF InASPSb/InAS HETEROJUNCTION FOR LASER DIODE IN THE 2-4μmWAVELENGTH REGION[J]. Chinese Journal of Luminescence, 1994,15(4): 327-331 DOI：

摘要

采用液相外延方法

生长出外延层与衬底之间的失配度△α/α≤1.6×10

-3

界面平直、组分恒定的InAsPSb/InAs外延晶体.单异质结外延层

得到了3.09μm波长的激光输出

双异质结外延片也得到了较好的伏-安特性曲线.

Abstract

Quaternary InAsPSb epitaxial layers have been directly grown on InAs substrate using liquid phase epitaxy(LPE)techniques.Some properties of InAsPSb/InAs were investigated.

I-V

characterstics of

P-N

junction consist of

-InAsPSb and

-InAs substrate were given at 300K and 77K.The epitaxial layers were lattice mismatch to InAs about 1.6×10

-3

.The diodes were driven by current pulsesob of 10μs duration and 500Hz-5kHz pulses/s repetition.The laser emission with wavelength 3.09μm was observed from single heterojunction made of P-InAs

0.82

0.12

0.06

and

-InAs substrate at 12K.

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