Grown by MOCVD

the GaAs/GaAsP quantum wires were obtained on a GaAs (100) non-planar substrate with W-groove profile patterns

which were etched by common UV lithograph and solution etching.It is found in term of SEM and micro area Raman spectrum that the growth rates both of GaAs and GaAsP were different at the different locations on these substrates.The growth rate at the middle top of the W-groove was faster than that at the planar surfece and at the bevel of the W-groove

the(111)surface.Then the epitaxial layers of GaAs/GaAsP become triangel at these middle tops ofthew-grooves.So that the quan-tum wires would be grown on them when the width of the middle tops of the W-grooves was etched to be verynarrow bychoosing suitable mask and etching conditions.Thequantum effect of these quantum wires has been viewed In the lumlnescence spectrum atlow temperature.