An investigation of the transient recombination decay in glowdischargingly deposited hydrogenated amorphous carbon is presented
the dependences on substrat temperature
emission energy and excitation energy have been investigated.Our measurements demonstrate that the recombination of a-C:H film conforms to the localized exciton recombination model.Due to the change of hydrogen content in the sample
the changes of defect density and degree of disorder effect the exciton recombination properties.